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1. (WO2007089097) ABRUPT METAL-INSULATOR TRANSITION DEVICE WITH PARALLEL CONDUCTING LAYERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/089097    International Application No.:    PCT/KR2007/000526
Publication Date: 09.08.2007 International Filing Date: 31.01.2007
IPC:
H01L 29/768 (2006.01)
Applicants: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE [KR/KR]; 161, Gajeong-dong, Yusong-gu, Daejeon-city 305-350 (KR) (For All Designated States Except US).
KIM, Hyun-Tak [KR/KR]; (KR) (For US Only).
CHAE, Byung-Gyu [KR/KR]; (KR) (For US Only).
KANG, Kwang-Yong [KR/KR]; (KR) (For US Only).
KIM, Bong-Jun [KR/KR]; (KR) (For US Only).
LEE, Yong-Wook [KR/KR]; (KR) (For US Only).
YUN, Sun-Jin [KR/KR]; (KR) (For US Only)
Inventors: KIM, Hyun-Tak; (KR).
CHAE, Byung-Gyu; (KR).
KANG, Kwang-Yong; (KR).
KIM, Bong-Jun; (KR).
LEE, Yong-Wook; (KR).
YUN, Sun-Jin; (KR)
Agent: Y.P.LEE, MOCK & PARTNERS; 1575-1, Seocho-dong, Seocho-gu, Seoul 137-875 (KR)
Priority Data:
10-2006-0009827 01.02.2006 KR
10-2006-0057086 23.06.2006 KR
Title (EN) ABRUPT METAL-INSULATOR TRANSITION DEVICE WITH PARALLEL CONDUCTING LAYERS
(FR) DISPOSITIF DE TRANSITION MÉTAL-ISOLANT ABRUPT AVEC COUCHES CONDUCTRICES PARALLÈLES
Abstract: front page image
(EN)An abrupt MIT (metal-insulator transition) device with parallel conducting layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one conducting layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the conducting layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the conducting layer, which is typically caused by current flowing through the conducting layer, is less likely to occur.
(FR)La présente invention concerne un dispositif MIT (Metal-Insulator Transition) abrupt comportant des couches conductrices parallèles. Ce dispositif comporte une première électrode placée dans une certaine région d'un substrat, une deuxième électrode placée à une distance définie de la première électrode, et au moins une couche électroconductrice reliant la première électrode à la deuxième électrode et d'une largeur suffisante pour que toute la région de la couche conductrice soit transformée en une couche métallique par l'effet du MIT. Cette configuration permet en grande partie d'éviter la détérioration de la couche conductrice, détérioration largement imputable au passage du courant dans la couche conductrice.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)