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Pub. No.:    WO/2007/089004    International Application No.:    PCT/JP2007/051873
Publication Date: 09.08.2007 International Filing Date: 30.01.2007
H01L 21/304 (2006.01)
Applicants: JSR CORPORATION [JP/JP]; 6-10, Tsukiji 5-chome, Chuo-ku, Tokyo 1040045 (JP) (For All Designated States Except US).
OKAMOTO, Takahiro [JP/JP]; (JP) (For US Only).
KUWABARA, Rikimaru [JP/JP]; (JP) (For US Only).
KURIYAMA, Keisuke [JP/JP]; (JP) (For US Only).
TSUJI, Shoei [JP/JP]; (JP) (For US Only)
Inventors: OKAMOTO, Takahiro; (JP).
KUWABARA, Rikimaru; (JP).
KURIYAMA, Keisuke; (JP).
TSUJI, Shoei; (JP)
Agent: OHSHIMA, Masataka; Ohshima Patent Office, BN Gyoen Building 17-11, Shinjuku 1-chome Shinjuku-ku, TOKYO 160-0022 (JP)
Priority Data:
2006-027080 03.02.2006 JP
(JA) 化学機械研磨パッド
Abstract: front page image
(EN)Disclosed is a chemical mechanical polishing pad which enables to have a high polishing rate while sufficiently suppressing generation of scratches on a surface to be polished. This chemical mechanical polishing pad also enables to realize high uniformity in polishing amount within the surface to be polished. Specifically disclosed is a chemical mechanical polishing pad wherein a polishing layer has a surface resistivity of from 1.0 × 107 to 9.9 × 1013 Ω. Such a polishing layer is preferably made of a composition containing (A) a polymer matrix component having a volume resistivity of from 1.0 × 1013 to 9.9 × 1017 Ω·cm, and (B) a component having a volume resistivity of from 1.0 × 106 to 9.9 × 1012 Ω·cm.
(FR)L'invention concerne un bloc de polissage chimico-mécanique permettant d'obtenir un taux de polissage élevé, tout en supprimant suffisamment la génération d'éraflures sur la surface à polir. Ce bloc de polissage chimico-mécanique permet également de réaliser une grande uniformité du polissage au niveau de la surface à polir. L'invention concerne plus précisément un bloc de polissage chimico-mécanique, une couche de polissage ayant une résistivité de surface comprise entre 1,0 × 107 et 9,9 × 1013 Ω. Une telle couche de polissage est de préférence constituée d'une composition contenant (A) un composant de matrice polymérique ayant une résistivité volumique comprise entre 1,0 × 1013 et 9,9 × 1017 Ω·cm et (B) un composant ayant une résistivité volumique comprise entre 1,0 × 106 et 9,9 × 1012 Ω·cm.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)