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Pub. No.:    WO/2007/088754    International Application No.:    PCT/JP2007/051031
Publication Date: 09.08.2007 International Filing Date: 24.01.2007
C30B 29/06 (2006.01), H01L 21/304 (2006.01)
Applicants: SUMCO CORPORATION [JP/JP]; 2-1, Shibaura 1-chome, Minato-ku, Tokyo1058634 (JP) (For All Designated States Except US).
KOYATA, Sakae [JP/JP]; (JP) (For US Only).
TAKAISHI, Kazushige [JP/JP]; (JP) (For US Only).
HASHII, Tomohiro [JP/JP]; (JP) (For US Only).
MURAYAMA, Katsuhiko [JP/JP]; (JP) (For US Only).
KATOH, Takeo [JP/JP]; (JP) (For US Only)
Inventors: KOYATA, Sakae; (JP).
TAKAISHI, Kazushige; (JP).
HASHII, Tomohiro; (JP).
MURAYAMA, Katsuhiko; (JP).
KATOH, Takeo; (JP)
Agent: SUDA, Masayoshi; OAK Ikebukuro Bldg., 21-11, Higashi-Ikebukuro 1-chome Toshima-ku Tokyo1700013 (JP)
Priority Data:
2006-021902 31.01.2006 JP
(JA) エピタキシャルウェーハの製造方法
Abstract: front page image
(EN)Provided is an epitaxial wafer manufacturing method by which surface defects on an epitaxial layer and generation of slip can be reduced. The epitaxial wafer manufacturing method is characterized in that the method includes a smoothing step of smoothing the wafer surface by controlling application of an etching solution onto the wafer surface in accordance with the surface shape of the silicon wafer, and an epitaxial layer forming step of forming an epitaxial layer composed of a silicon single crystal by epitaxial growing on the surface of the wafer.
(FR)L'invention concerne un procédé de fabrication d'une plaquette épitaxiale qui permet de réduire les défauts de surface sur une couche épitaxiale et la production de glissement. Ce procédé de fabrication de plaquette épitaxiale se caractérise en ce qu'il consiste à lisser la surface de la plaquette par régulation de l'application d'une solution de gravure sur cette surface, selon la forme de la surface de la plaquette de silicium, et à former une couche épitaxiale composée d'un monocristal en silicium par croissance épitaxiale sur la surface de la plaquette.
(JA) エピタキシャル層に形成される表面欠陥やスリップの発生を低減し得るエピタキシャルウェーハの製造方法を提供する。  シリコンウェーハの表面形状に応じてウェーハ表面へのエッチング液の適用を制御することによりウェーハ表面を平滑化する平滑化工程と、ウェーハの表面にエピタキシャル成長によってシリコン単結晶からなるエピタキシャル層を形成するエピタキシャル層形成工程とを含むことを特徴とするエピタキシャルウェーハの製造方法である。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)