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1. (WO2007088682) INFORMATION RECORDING MEDIUM, METHOD FOR PRODUCING SAME, AND APPARATUS FOR PRODUCING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/088682    International Application No.:    PCT/JP2006/325201
Publication Date: 09.08.2007 International Filing Date: 18.12.2006
IPC:
G11B 7/254 (2006.01), G11B 7/24 (2006.01), G11B 7/243 (2006.01), G11B 7/257 (2006.01), G11B 7/26 (2006.01)
Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
SAKAUE, Yoshitaka; (For US Only).
KOJIMA, Rie; (For US Only).
NISHIHARA, Takashi; (For US Only)
Inventors: SAKAUE, Yoshitaka; .
KOJIMA, Rie; .
NISHIHARA, Takashi;
Agent: KAMADA, Koichi; 7th Fl., TOMOE MARION BLDG. 4-3-1, Nishitenma, Kita-ku Osaka-shi, Osaka 5300047 (JP)
Priority Data:
2006-022022 31.01.2006 JP
Title (EN) INFORMATION RECORDING MEDIUM, METHOD FOR PRODUCING SAME, AND APPARATUS FOR PRODUCING SAME
(FR) SUPPORT D'ENREGISTREMENT D'INFORMATIONS ET PROCEDE ET APPAREIL POUR LE FABRIQUER
(JA) 情報記録媒体およびその製造方法、並びにその製造装置
Abstract: front page image
(EN)Disclosed is an information recording medium comprising recording layers (19, 26) wherein a phase change detectable by an optical or electrical means occurs, and interface layers (18, 20, 25, 27) as oxide layers in contact with the recording layers (19, 26). The recording layer (19) contains a Ge-Bi-Te-M material represented by the following formula: Ge&agr;Bi&bgr;TeϝM100-&agr;-&bgr;-ϝ (atom%) (wherein M represents at least one element selected from Al, Ga, In and Mn, and &agr;, &bgr; and ϝ satisfy the following relations: 25 ≤ &agr; ≤ 60, 0 < &bgr; ≤ 18, 35 ≤ ϝ ≤ 55, 82 ≤ &agr; + &bgr; + ϝ < 100). The interface layers (18, 20, 25, 27) contain at least one oxide of the element M contained in the recording layers (19, 26).
(FR)L'invention concerne un support d'enregistrement d'informations comprenant des couches d'enregistrement (19, 26), dans lesquelles se produit un changement de phase détectable par un moyen optique ou électrique, et des couches d'interface (18, 20, 25, 27) sous la forme de couches d'oxyde en contact avec les couches d'enregistrement (19, 26). La couche d'enregistrement (19) contient un matériau Ge-Bi-Te-M répondant à la formule suivante : GeαBiβTe&ggr;M100-α-β-&ggr; (en % atomique), dans laquelle M représente au moins un élément choisi parmi Al, Ga, In et Mn et α, β et &ggr; satisfont aux relations suivantes : 25 ≤ α ≤ 60, 0 < β ≤ 18, 35 ≤ &ggr; ≤ 55, 82 ≤ α + β + &ggr; < 100). Les couches d'interface (18, 20, 25, 27) contiennent au moins un oxyde de l'élément M présent dans les couches d'enregistrement (19, 26).
(JA) 本発明の情報記録媒体は、光学的手段または電気的手段を用いて検出可能な相変化を生じる記録層(19,26)と、記録層(19,26)に接する酸化物層としての界面層(18,20,25,27)と、を含む。記録層(19)は、式:GeαBiβTeγ100-α-β-γ(原子%)(Mは、Al、Ga、InおよびMnから選択される少なくとも1つの元素を示し、α、βおよびγは、25≦α≦60、0<β≦18、35≦γ≦55、82≦α+β+γ<100を満たす。)で表されるGe-Bi-Te-M系材料を含んでいる。界面層(18,20,25,27)は、記録層(19,26)に含まれる元素Mの酸化物を少なくとも1種含んでいる。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)