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1. WO2007087769 - OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH CURRENT SPREADING LAYER

Publication Number WO/2007/087769
Publication Date 09.08.2007
International Application No. PCT/DE2006/001617
International Filing Date 14.09.2006
IPC
H01L 31/0224 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01S 5/042 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping
042Electrical excitation
CPC
H01L 2224/48463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
48463the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
H01L 31/022466
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
H01L 31/103
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
103the potential barrier being of the PN homojunction type
H01L 31/1884
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1884Manufacture of transparent electrodes, e.g. TCO, ITO
H01L 33/0095
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0095Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
H01L 33/42
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
42Transparent materials
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE] (AllExceptUS)
  • AHLSTEDT, Magnus [SE]/[DE] (UsOnly)
  • EISSLER, Dieter [DE]/[DE] (UsOnly)
  • WALTER, Robert [DE]/[DE] (UsOnly)
  • WIRTH, Ralf [DE]/[DE] (UsOnly)
Inventors
  • AHLSTEDT, Magnus
  • EISSLER, Dieter
  • WALTER, Robert
  • WIRTH, Ralf
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2005 046 190.527.09.2005DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHES HALBLEITERBAUELEMENT MIT STROMAUFWEITUNGSSCHICHT
(EN) OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH CURRENT SPREADING LAYER
(FR) ÉLÉMENT SEMI-CONDUCTEUR OPTOÉLECTRONIQUE DOTÉ D'UNE COUCHE D'ÉTALEMENT DU COURANT
Abstract
(DE)
Es wird ein optoelektronisches Halbleiterbauelement mit einem Halbleiterkörper (10), und einer Stromaufweitungsschicht (3) angegeben. Die Stromaufweitungsschicht (3) ist zumindest stellenweise auf den Halbleiterkörper (10) aufgebracht. Dabei enthält die Stromaufweitungsschicht (3) ein Metall (1), das in der Stromaufweitungsschicht ein transparentes, elektrisch leitfähiges Metalloxid (2) bildet, und die Konzentration (x) des Metalls (1) nimmt von der dem Halbleiterkörper (10) zugewandten Seite zur dem Halbleiterkörper (10) abgewandten Seite der Stromaufweitungsschicht (3) hin ab. Ferner wird ein Verfahren zur Herstellung eines solchen Halbleiterbauelements angegeben.
(EN)
An optoelectronic semiconductor component with a semiconductor body (10) and a current spreading layer (3) is disclosed. The current spreading layer (3) is applied at least on parts of the semiconductor body (10). The current spreading layer (3) contains a metal (1) that forms a transparent, electroconductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from the side of the current spreading layer (3) facing the semiconductor body (10) to the side of the current spreading layer (3) away from the semiconductor body (10). Also disclosed is a method for producing this type of semiconductor component.
(FR)
L'invention concerne un élément semi-conducteur optoélectronique comportant un corps semi-conducteur (10) et une couche d'étalement du courant (3) disposée au moins partiellement sur le corps semi-conducteur (10). La couche d'étalement du courant (3) comprend un métal (1) qui forme un oxyde métallique (2) transparent et électriquement conducteur dans la couche d'étalement du courant. La concentration (x) du métal (1) diminue de la face orientée vers le corps semi-conducteur (10) à la face opposée au corps semi-conducteur (10) de la couche d'étalement du courant (3). L'invention porte aussi sur un procédé de fabrication d'un élément semi-conducteur de ce type.
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