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1. WO2007086529 - CHEMICAL MECHANICAL POLISHING PAD AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2007/086529
Publication Date 02.08.2007
International Application No. PCT/JP2007/051315
International Filing Date 22.01.2007
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
B24B 37/20
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
11Lapping tools
20Lapping pads for working plane surfaces
B24D 18/00
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
DTOOLS FOR GRINDING, BUFFING, OR SHARPENING
18Manufacture of grinding tools ; or other grinding devices; , e.g. wheels, not otherwise provided for
H01L 21/67294
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
67294using identification means, e.g. labels on substrates or labels on containers
Applicants
  • JSR株式会社 JSR CORPORATION [JP]/[JP] (AllExceptUS)
  • 保坂 幸生 HOSAKA, Yukio [JP]/[JP] (UsOnly)
  • 辻 昭衛 TSUJI, Shoei [JP]/[JP] (UsOnly)
Inventors
  • 保坂 幸生 HOSAKA, Yukio
  • 辻 昭衛 TSUJI, Shoei
Agents
  • 大島 正孝 OHSHIMA, Masataka
Priority Data
2006-01594425.01.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CHEMICAL MECHANICAL POLISHING PAD AND METHOD FOR MANUFACTURING SAME
(FR) TAMPON DE POLISSAGE CHIMIQUE ET MÉCANIQUE ET SON PROCÉDÉ DE FABRICATION
(JA) 化学機械研磨パッドおよびその製造方法
Abstract
(EN)
A chemical mechanical polishing pad is provided with a circular polishing surface and a non-polishing surface, i.e., the rear surface of the polishing surface, and includes inside an information recording medium from or in which information can be read or read/write without contact by using electromagnetic wave. Preferably, the position of the gravity center of the information recording medium in the radius direction of the polishing surface is within 0-10% or 80-100% of the radius of the polishing surface in a direction from the center on the radius of the polishing surface toward the outer circumference.
(FR)
La présente invention concerne un tampon de polissage chimique et mécanique avec une surface de polissage circulaire et une surface de non polissage, c.-à-d. la surface arrière de la surface de polissage, ledit tampon comprenant à l'intérieur un support d'enregistrement d'informations à partir duquel ou dans lequel des informations peuvent être lues ou lues/écrites sans contact au moyen d'une onde électromagnétique. De préférence, la position du centre de gravité du support d'enregistrement d'informations dans la direction du rayon de la surface de polissage est située à 0-10% ou 80-100% du rayon de la surface de polissage dans une direction depuis le centre sur le rayon de la surface de polissage vers la circonférence externe.
(JA)
本発明の化学機械研磨パッドは、円形の研磨面と該研磨面の裏面である非研磨面とを有し、内部に電磁波を用いて非接触に読み取りまたは読み書き可能な情報記録媒体を含んでなり、好ましくは研磨面の半径方向における情報記録媒体の重心の位置が、研磨面の半径上の中心から外周へと向かう方向で研磨面の半径の0~10%または80~100%の範囲内にある。
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