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1. (WO2007086325) ELECTRIC ELEMENT, MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/086325    International Application No.:    PCT/JP2007/050809
Publication Date: 02.08.2007 International Filing Date: 19.01.2007
IPC:
H01L 27/10 (2006.01), G11C 13/00 (2006.01), H01L 21/822 (2006.01), H01L 27/04 (2006.01), H01L 45/00 (2006.01), H01L 49/00 (2006.01)
Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
MITANI, Satoru; (For US Only).
OSANO, Koichi; (For US Only).
MURAOKA, Shunsaku; (For US Only).
NAGO, Kumio; (For US Only)
Inventors: MITANI, Satoru; .
OSANO, Koichi; .
MURAOKA, Shunsaku; .
NAGO, Kumio;
Agent: MAEDA, Hiroshi; Osaka-Marubeni Bldg. 5-7, Hommachi 2-chome Chuo-ku, Osaka-shi Osaka 5410053 (JP)
Priority Data:
2006-014940 24.01.2006 JP
Title (EN) ELECTRIC ELEMENT, MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT
(FR) ÉLÉMENT ÉLECTRIQUE, DISPOSITIF DE MÉMOIRE ET CIRCUIT INTÉGRÉ À SEMI-CONDUCTEURS
(JA) 電気素子,メモリ装置,および半導体集積回路
Abstract: front page image
(EN)An electric element is provided with a first electrode, a second electrode and a variable resistive thin film connected between the first electrode and the second electrode. The variable resistive thin film includes Fe3O4 as a constituting element, and has a crystal grain size of 5nm or more but not more than 150nm.
(FR)L'invention concerne un élément électrique doté d'une première électrode, d'une seconde électrode et d'un film mince résistif variable connecté entre la première électrode et la seconde électrode. Le film mince résistif variable comprend du Fe3O4 en guise d'élément constitutif, et a une taille de grain de cristal allant de 5 nm à 150 nm.
(JA) 電気素子は、第1の電極と、第2の電極と、第1の電極と第2の電極との間に接続される可変抵抗薄膜とを備える。可変抵抗薄膜は、Feを構成元素として含み、且つ、結晶粒径が5nm以上であり150nm以下である。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)