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1. WO2007086325 - ELECTRIC ELEMENT, MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT

Publication Number WO/2007/086325
Publication Date 02.08.2007
International Application No. PCT/JP2007/050809
International Filing Date 19.01.2007
IPC
H01L 27/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
G11C 13/00 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
H01L 21/822 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 27/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 49/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
G11C 11/5685
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5685using storage elements comprising metal oxide memory material, e.g. perovskites
G11C 13/0007
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0007comprising metal oxide memory material, e.g. perovskites
G11C 13/0069
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
G11C 2013/009
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
009Write using potential difference applied between cell electrodes
G11C 2213/32
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2213Indexing scheme relating to G11C13/00 for features not covered by this group
30Resistive cell, memory material aspects
32Material having simple binary metal oxide structure
G11C 2213/34
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2213Indexing scheme relating to G11C13/00 for features not covered by this group
30Resistive cell, memory material aspects
34Material includes an oxide or a nitride
Applicants
  • 松下電器産業株式会社 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP]/[JP] (AllExceptUS)
  • 三谷 覚 MITANI, Satoru (UsOnly)
  • 小佐野 浩一 OSANO, Koichi (UsOnly)
  • 村岡 俊作 MURAOKA, Shunsaku (UsOnly)
  • 名古 久美男 NAGO, Kumio (UsOnly)
Inventors
  • 三谷 覚 MITANI, Satoru
  • 小佐野 浩一 OSANO, Koichi
  • 村岡 俊作 MURAOKA, Shunsaku
  • 名古 久美男 NAGO, Kumio
Agents
  • 前田 弘 MAEDA, Hiroshi
Priority Data
2006-01494024.01.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTRIC ELEMENT, MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT
(FR) ÉLÉMENT ÉLECTRIQUE, DISPOSITIF DE MÉMOIRE ET CIRCUIT INTÉGRÉ À SEMI-CONDUCTEURS
(JA) 電気素子,メモリ装置,および半導体集積回路
Abstract
(EN)
An electric element is provided with a first electrode, a second electrode and a variable resistive thin film connected between the first electrode and the second electrode. The variable resistive thin film includes Fe3O4 as a constituting element, and has a crystal grain size of 5nm or more but not more than 150nm.
(FR)
L'invention concerne un élément électrique doté d'une première électrode, d'une seconde électrode et d'un film mince résistif variable connecté entre la première électrode et la seconde électrode. Le film mince résistif variable comprend du Fe3O4 en guise d'élément constitutif, et a une taille de grain de cristal allant de 5 nm à 150 nm.
(JA)
 電気素子は、第1の電極と、第2の電極と、第1の電極と第2の電極との間に接続される可変抵抗薄膜とを備える。可変抵抗薄膜は、Feを構成元素として含み、且つ、結晶粒径が5nm以上であり150nm以下である。
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