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1. WO2007086163 - PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Publication Number WO/2007/086163
Publication Date 02.08.2007
International Application No. PCT/JP2006/317633
International Filing Date 06.09.2006
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
H01L 21/3003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
3003Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
H01L 29/4908
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
4908for thin film semiconductor, e.g. gate of TFT
H01L 29/66757
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
6675Amorphous silicon or polysilicon transistors
66757Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
H01L 29/66765
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
6675Amorphous silicon or polysilicon transistors
66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
H01L 29/78603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78603characterised by the insulating substrate or support
H01L 29/78648
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78645with multiple gate
78648arranged on opposing sides of the channel
Applicants
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • 安松拓人 YASUMATSU, Takuto (UsOnly)
Inventors
  • 安松拓人 YASUMATSU, Takuto
Agents
  • 安富康男 YASUTOMI, Yasuo
Priority Data
2006-01678225.01.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE PRODUCTION D’UN DISPOSITIF SEMI-CONDUCTEUR ET DISPOSTIF SEMI-CONDUCTEUR
(JA) 半導体装置の製造方法、及び、半導体装置
Abstract
(EN)
A process for producing a semiconductor device in which a semiconductor device of high performance can be produced through simple processing at low temperature. There is provided a process for producing a semiconductor device having a substrate and, sequentially superimposed thereon, a first insulating film, a semiconductor layer and a second insulating film, which process comprises the steps of forming a first insulating film including a hydrogen barrier layer; forming a semiconductor layer on a region of the first insulating film where the hydrogen barrier layer is disposed; incorporating hydrogen in the semiconductor layer; forming a second insulating film including a hydrogen barrier layer on at least a region where the semiconductor layer is disposed; and performing hydrogenation annealing of the semiconductor layer.
(FR)
La présente invention concerne un procédé de production d’un dispositif semi-conducteur dans lequel un dispositif semi-conducteur à haute performance peut être produit par un traitement simple à basse température. Elle concerne un procédé de production d’un dispositif semi-conducteur comportant un substrat et, superposées séquentiellement sur le substrat, une première pellicule isolante, une couche semi-conductrice et une seconde pellicule isolante, les étapes du procédé consistant à constituer une première pellicule isolante comprenant une couche de barrière hydrogène ; à constituer une couche semi-conductrice sur une zone de la première pellicule isolante sur laquelle la couche de barrière hydrogène est disposée ; à incorporer de l’hydrogène dans la couche semi-conductrice ; à constituer une seconde pellicule isolante comprenant une couche de barrière hydrogène sur au moins une zone sur laquelle la couche semi-conductrice est disposée ; et à réaliser un recuit d’hydrogénation de la couche semi-conductrice.
(JA)
本発明は、低温かつ簡便なプロセスで高性能な半導体装置を製造することができる半導体装置の製造方法を提供する。本発明の半導体装置の製造方法は、第1絶縁膜、半導体層及び第2絶縁膜をこの順に基板上に有する半導体装置の製造方法であって、上記製造方法は、水素遮断層を含む第1絶縁膜を形成する工程と、第1絶縁膜の水素遮断層が配置された領域上に半導体層を形成する工程と、半導体層中に水素を含有させる工程と、少なくとも半導体層が配置された領域に水素遮断層を含む第2絶縁膜を形成する工程と、半導体層の水素化アニールを行う工程とを含むものである。
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