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Machine translation
1. (WO2007084982) DUAL-DAMASCENE PROCESS TO FABRICATE THICK WIRE STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/084982    International Application No.:    PCT/US2007/060767
Publication Date: 26.07.2007 International Filing Date: 19.01.2007
IPC:
H01L 23/48 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road, Armonk, NY 10504 (US) (For All Designated States Except US).
COOLBAUGH, Douglas, D. [US/US]; (US) (For US Only).
DOWNES, Keith, E. [US/US]; (US) (For US Only).
LINDGREN, Peter, J. [US/US]; (US) (For US Only).
STAMPER, Anthony, K. [US/US]; (US) (For US Only)
Inventors: COOLBAUGH, Douglas, D.; (US).
DOWNES, Keith, E.; (US).
LINDGREN, Peter, J.; (US).
STAMPER, Anthony, K.; (US)
Agent: SABO, William, D.; INTERNATIONAL BUSINESS MACHINES CORPORATION, INTELLECTUAL PROPERTY LAW -- ZIP 972E, 1000 River Street, Essex Junction, VT 05452 (US)
Priority Data:
11/275,604 19.01.2006 US
Title (EN) DUAL-DAMASCENE PROCESS TO FABRICATE THICK WIRE STRUCTURE
(FR) PROCEDE DE DOUBLE DAMASQUINAGE POUR LA FABRICATION DE STRUCTURE DE FIL EPAIS
Abstract: front page image
(EN)A method and semiconductor device. In the method, at least one partial via (26) is etched in a stacked structure and a border (32) is formed about the at least one partial via (26). The method further includes performing thick wiring using selective etching while continuing via etching to at least one etch stop layer (22).
(FR)La présente invention concerne un procédé et un dispositif à semi-conducteurs. Dans le procédé, au moins un orifice partiel (26) est décapé dans une structure empilée et un bord (32) est formé sur au moins l'un des orifices partiels (26). Le procédé comprend également la réalisation de fils épais en utilisant un décapage sélectif, tout en continuant le décapage de l'orifice sur au moins une couche d'arrêt de décapage (22).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)