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Machine translation
1. (WO2007084879) LOW RESISTANCE AND INDUCTANCE BACKSIDE THROUGH VIAS AND METHODS OF FABRICATING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/084879    International Application No.:    PCT/US2007/060544
Publication Date: 26.07.2007 International Filing Date: 15.01.2007
IPC:
H01L 21/00 (2006.01), H01L 21/44 (2006.01), H01L 21/77 (2006.01), H01L 21/302 (2006.01), H01L 21/306 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road, Armonk, NY 10504 (US) (For All Designated States Except US).
ERTURK, Mete [CY/US]; (US) (For US Only).
GROVES, Robert, A. [US/US]; (US) (For US Only).
JOHNSON, Jeffrey, B. [US/US]; (US) (For US Only).
JOSEPH, Alvin, J. [IN/US]; (US) (For US Only).
LIU, Qizhi [CN/US]; (US) (For US Only).
SPROGIS, Edmund, J. [US/US]; (US) (For US Only).
STAMPER, Anthony, K. [US/US]; (US) (For US Only)
Inventors: ERTURK, Mete; (US).
GROVES, Robert, A.; (US).
JOHNSON, Jeffrey, B.; (US).
JOSEPH, Alvin, J.; (US).
LIU, Qizhi; (US).
SPROGIS, Edmund, J.; (US).
STAMPER, Anthony, K.; (US)
Agent: SABO, William, D.; INTERNATIONAL BUSINESS MACHINES CORPORATION, INTELLECTUAL PROPERTY LAW -- ZIP 972E, 1000 River Street, Essex Junction, VT 05452 (US)
Priority Data:
11/275,542 13.01.2006 US
Title (EN) LOW RESISTANCE AND INDUCTANCE BACKSIDE THROUGH VIAS AND METHODS OF FABRICATING SAME
(FR) ENVERS À FAIBLE RÉSISTANCE ET INDUCTANCE UTILISANT DES VIAS, ET LEUR PROCÉDÉ DE FABRICATION
Abstract: front page image
(EN)A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation (250) in a substrate (100), the substrate (100) having a frontside and an opposing backside; forming a first dielectric layer (105) on the frontside of the substrate (100); forming a trench (265C) in the first dielectric layer (105), the trench (265C) aligned over and within a perimeter of the dielectric isolation (250) and extending to the dielectric isolation (250); extending the trench (265C) formed in the first dielectric layer (1 05) through the dielectric isolation (250) and into the substrate (1 00)to a depth (Dl ) less than a thickness of the substrate (1 00); filling the trench (265C) and co-planarizing a top surface of the trench (265C) with a top surface of the first dielectric layer (1 05) to form an electrically conductive through via (270C); and thinning the substrate (100) from a backside of the substrate (100) to expose the through via (270C).
(FR)L'invention porte sur une structure de contact d’envers et sur son procédé de fabrication consistant: à former une première isolation diélectrique (250) sur un substrat (100) présentant un endroit et en envers; à former dans la première couche diélectrique (105) une rainure alignée sur le périmètre de l’isolation diélectrique (250) et intérieure à son périmètre et s'étendant vers l’isolation diélectrique (250); à étendre la rainure (265C) formée dans la couche diélectrique (105) dans l’isolation diélectrique (250) et dans le substrat (100) jusqu'à une profondeur (DI) inférieure à l’épaisseur du substrat (100); à remplir la rainure (265C) et en aplanir la surface supérieure avec celle de la première couche diélectrique (105) pour former un via traversant conducteur (270C); et à amincir le substrat (100) depuis son envers pour exposer le via (270C).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)