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Machine translation
1. (WO2007084848) SINGLE STRESS LINER FOR MIGRATION STABILITY AND SPEED
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/084848    International Application No.:    PCT/US2007/060474
Publication Date: 26.07.2007 International Filing Date: 12.01.2007
IPC:
H01L 29/94 (2006.01), H01L 27/11 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road, Armonk, NY 10504 (US) (For All Designated States Except US).
CHAN, Joseph, Y. [US/US]; (US) (For US Only).
WONG, Robert, C. [US/US]; (US) (For US Only)
Inventors: CHAN, Joseph, Y.; (US).
WONG, Robert, C.; (US)
Agent: JAKLITSCH, Lisa, U.; International Business Machines Corporation, 2070 Route 52 M/D 482, Hopewell Junction, NY 12533 (US)
Priority Data:
11/306,943 17.01.2006 US
Title (EN) SINGLE STRESS LINER FOR MIGRATION STABILITY AND SPEED
(FR) ISOLANT UNIQUE A LA TENSION POUR LA STABILITE DE MIGRATION ET LA RAPIDITE
Abstract: front page image
(EN)A single stress liner (120) is applied over different type semiconductor devices. The single stress liner (120) avoids the problems of a dual/hybrid stress liner scheme by eliminating the meeting area. The single stress liner (120) may be tensile or compressive. In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).
(FR)La présente invention concerne un isolant unique à la tension (120) appliqué à différents types de dispositifs à semi-conducteurs. L'isolant (120) évite les problèmes d'un schéma d'isolant à la tension double/hybride en éliminant la zone de contact. L'isolant (120) peut être ductile ou compressif. Dans un mode de réalisation, le dispositif à semi-conducteurs comprend une cellule de mémoire vive statique (SRAM) possédant plusieurs dispositifs FET de type N (110) et dispositifs FET de type P (112).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)