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1. (WO2007083152) METHOD OF ETCHING A SILICON-BASED MATERIAL
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2007/083152 International Application No.: PCT/GB2007/000204
Publication Date: 26.07.2007 International Filing Date: 23.01.2007
IPC:
H01L 21/306 (2006.01)
Applicants: GREEN, Mino[GB/GB]; GB (UsOnly)
LIU, Fengming[CN/GB]; GB (UsOnly)
NEXEON LTD[GB/GB]; 9400 Garsington Road Oxford Business Park Oxford OX4 2HN, GB (AllExceptUS)
Inventors: GREEN, Mino; GB
LIU, Fengming; GB
Agent: HEDLEY, Nicholas, James, Matthew ; Kilburn & Strode 20 Red Lion Street London WC1R 4PJ, GB
Priority Data:
0601318.923.01.2006GB
Title (EN) METHOD OF ETCHING A SILICON-BASED MATERIAL
(FR) PROCEDE DE DECAPAGE D’UN MATERIAU A BASE DE SILICIUM
Abstract:
(EN) A method is described of selectively etching a silicon substrate in small local areas in order to form columns or pillars in the etched surface. The silicon substrate is held in an etching solution of hydrogen fluoride, a silver salt and an alcohol. The inclusion of the alcohol provides a greater packing density of the silicon columns.
(FR) L’invention concerne un procédé de décapage sélectif d’un substrat en silicium en de petites zones localisées de manière à former des colonnes ou piliers dans la surface décapée. Le substrat de silicium est maintenu dans une solution décapante de fluorure d’hydrogène, d’un sel d’argent et d’un alcool. L’inclusion d’un alcool permet d’obtenir une densité de tassement des colonnes de silicium plus élevée.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)