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Machine translation
1. (WO2007079036) METHOD AND APPARATUS FOR CLEANING A SEMICONDUCTOR SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/079036    International Application No.:    PCT/US2006/049109
Publication Date: 12.07.2007 International Filing Date: 21.12.2006
Chapter 2 Demand Filed:    23.07.2007    
IPC:
C25F 1/00 (2006.01)
Applicants: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, Fremont, CA 94538 (US) (For All Designated States Except US).
FREER, Erik, M. [US/US]; (US) (For US Only).
DE LARIOS, John, M. [US/US]; (US) (For US Only).
MIKHAYLICHENKO, Katrina [RU/US]; (US) (For US Only).
RAVKIN, Michael [US/US]; (US) (For US Only).
KOROLIK, Mikhail [RU/US]; (US) (For US Only).
REDEKER, Fred, C. [US/US]; (US) (For US Only)
Inventors: FREER, Erik, M.; (US).
DE LARIOS, John, M.; (US).
MIKHAYLICHENKO, Katrina; (US).
RAVKIN, Michael; (US).
KOROLIK, Mikhail; (US).
REDEKER, Fred, C.; (US)
Agent: GENCARELLA, Michael, L.; MARTINE PENILLA & GENCARELLA, LLP, 710 Lakeway Drive, Suite 200, Sunnyvale, CA 94085 (US)
Priority Data:
60/755,377 30.12.2005 US
11/612,371 18.12.2006 US
Title (EN) METHOD AND APPARATUS FOR CLEANING A SEMICONDUCTOR SUBSTRATE
(FR) PROCEDE ET APPAREIL DE NETTOYAGE D'UN SUBSTRAT SEMICONDUCTEUR
Abstract: front page image
(EN)A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.
(FR)La présente invention concerne un procédé de nettoyage d'un substrat qui consiste à déposer tout d'abord sur une surface du substrat, une couche de fluide contenant des constituants solides. Une force de cisaillement dirigée sensiblement parallèlement à la surface du substrat et en direction d'un bord externe du substrat est ensuite créée. Cette force de cisaillement peut résulter d'une composante perpendiculaire ou tangentielle d'une force appliquée, dans une forme de réalisation, sur un corps solide en contact avec la couche de fluide. La surface du substrat est rincée pour éliminer la couche de fluide. Un système et un appareil de nettoyage sont également présentés.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)