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1. (WO2007078892) A TENSILE STRAINED NMOS TRANSISTOR USING GROUP III-N SOURCE/DRAIN REGIONS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2007/078892 International Application No.: PCT/US2006/048078
Publication Date: 12.07.2007 International Filing Date: 15.12.2006
IPC:
H01L 21/336 (2006.01) ,H01L 29/10 (2006.01)
Applicants: DATTA, Suman[IN/US]; US (UsOnly)
BRASK, Justin, K.[CA/US]; US (UsOnly)
JIN, Been-yih[US/US]; US (UsOnly)
KAVALIEROS, Jack, T.[US/US]; US (UsOnly)
HUDAIT, Mantu, K.[IN/US]; US (UsOnly)
INTEL CORPORATION[US/US]; 2200 Mission College Boulevard Santa Clara, CA 95052, US (AllExceptUS)
Inventors: DATTA, Suman; US
BRASK, Justin, K.; US
JIN, Been-yih; US
KAVALIEROS, Jack, T.; US
HUDAIT, Mantu, K.; US
Agent: VINCENT, Lester, J. ; BLAKELY, SOKOLOFF, TAYLOR & ZAFMAN LLP 12400 Wilshire Boulevard, 7th Floor Los Angeles, CA 90025, US
Priority Data:
11/323,68829.12.2005US
Title (EN) A TENSILE STRAINED NMOS TRANSISTOR USING GROUP III-N SOURCE/DRAIN REGIONS
(FR) TRANSISTOR NMOS DEFORME EN TRACTION UTILISANT DES REGIONS SOURCES/DRAINS DE GROUPE III-N
Abstract:
(EN) Enhancement mode transistors are described where a Group III-N compound is used in the source and drain regions to place tensile strain on the channel. The source and drain regions may be raised or embedded, and fabricated in conjunction with recessed or raised compression regions for p channel transistors.
(FR) La présente invention concerne des transistors à mode d'amélioration dans lesquels un composé de groupe III-N est utilisé dans les régions sources et drains afin de placer une déformation en traction sur le canal. Les régions sources et drains peuvent être en relief ou incorporées et fabriquées en conjonction avec des régions de compression encastrées ou en relief pour des transistors de canaux p.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)