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1. (WO2007078686) METHOD OF POLISHING A SEMICONDUCTOR-ON-INSULATOR STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/078686    International Application No.:    PCT/US2006/047269
Publication Date: 12.07.2007 International Filing Date: 12.12.2006
IPC:
H01L 21/321 (2006.01), H01L 21/66 (2006.01)
Applicants: CORNING INCORPORATED [US/US]; 1 Riverfront Plaza, Corning, NY 14831 (US) (For All Designated States Except US).
CITES, Jeffrey, S [US/US]; (US) (For US Only).
DARCANGELO, Charles, M. [US/US]; (US) (For US Only).
GREGORSKI, Steven, J. [US/US]; (US) (For US Only).
MASCHMEYER, Richard, O. [US/US]; (US) (For US Only).
STOCKER, Mark, A. [GB/US]; (US) (For US Only).
THOMAS, John, C. [US/US]; (US) (For US Only)
Inventors: CITES, Jeffrey, S; (US).
DARCANGELO, Charles, M.; (US).
GREGORSKI, Steven, J.; (US).
MASCHMEYER, Richard, O.; (US).
STOCKER, Mark, A.; (US).
THOMAS, John, C.; (US)
Agent: ABLE, Kevin, M.; Corning Incorporated, Sp-ti-3-1, Patent Department, Corning, NY 14831 (US)
Priority Data:
11/314,060 20.12.2005 US
Title (EN) METHOD OF POLISHING A SEMICONDUCTOR-ON-INSULATOR STRUCTURE
(FR) PROCEDE POUR POLIR UNE STRUCTURE SEMICONDUCTEUR SUR ISOLANT
Abstract: front page image
(EN)A method of polishing a semiconductor layer formed on a transparent substrate is described, the method including measuring the thickness of the semiconductor from the substrate side of the semiconductor layer simultaneously with the polishing, and using the thickness measurement to modify the polishing.
(FR)L’invention concerne un procédé pour le polissage d’une couche de semiconducteur formée sur un substrat transparent. Le procédé consiste à mesurer l’épaisseur du semiconducteur côté substrat de la couche de semiconducteur, et en même temps à polir, en utilisant la mesure de l'épaisseur pour modifier le polissage.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)