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1. (WO2007077125) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/077125    International Application No.:    PCT/EP2006/069909
Publication Date: 12.07.2007 International Filing Date: 19.12.2006
IPC:
H01L 21/8238 (2006.01), H01L 29/04 (2006.01), H01L 29/10 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road, Armonk, NY 10504 (US) (For All Designated States Except US).
IBM UNITED KINGDOM LIMITED [GB/GB]; P.O. Box 41, Portsmouth Hampshire PO6 3AU (GB) (MG only).
OUYANG, Qiqing [US/US]; (US) (For US Only).
FISCHETTI, Massimo [IT/US]; (US) (For US Only)
Inventors: OUYANG, Qiqing; (US).
FISCHETTI, Massimo; (US)
Agent: LITHERLAND, David, Peter; IBM United Kingdom Limited, Intellectual Property Law, Hursley Park, Winchester Hampshire SO21 2JN (GB)
Priority Data:
11/327,256 06.01.2006 US
Title (EN) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR
(FR) SEMI-CONDUCTEUR À OXYDE MÉTALLIQUE COMPLÉMENTAIRE
Abstract: front page image
(EN)A semiconductor (e.g., complementary metal oxide semiconductor (CMOS)) structure formed on a (110) substrate that has improved performance, in terms of mobility enhancement includes at least one of a single tensile stressed liner, a compressively stressed shallow trench isolation (STI) region, or a tensile stressed embedded well, which is used in conjunction with the (110) substrate to improve carrier mobility of both nFETs and pFETs.
(FR)La structure semi-conductrice (par exemple un semi-conducteur à oxyde métallique complémentaire (CMOS)) selon l’invention disposée sur un substrat (110) dont la performance est améliorée, en termes d'amélioration de mobilité, comprend au moins un revêtement contraint en traction unique, et/ou une zone d'isolation en souille creuse contrainte en compression (STI), et/ou une paroi incorporée contrainte en traction, qui est utilisé en conjonction avec le substrat (110) pour améliorer la mobilité de porteurs de charge aussi bien des nFET que des pFET.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)