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Machine translation
1. (WO2007073942) EMITTER-SWITCHED BIPOLAR TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/073942    International Application No.:    PCT/EP2006/012573
Publication Date: 05.07.2007 International Filing Date: 28.12.2006
IPC:
H03K 17/0412 (2006.01), H03K 17/567 (2006.01)
Applicants: CONERGY AG [DE/DE]; Anckelmannsplatz 1, 20537 Hamburg (DE) (For All Designated States Except US).
OPPERMANN, HANS [DE/DE]; (DE) (For US Only)
Inventors: OPPERMANN, HANS; (DE)
Agent: HUBER, Arnulf; Uexküll & Stolberg, Beselerstr. 4, 22607 Hamburg (DE)
Priority Data:
10 2005 062 755.2 28.12.2005 DE
Title (DE) EMITTER-GESCHALTETER BIPOLARTRANSISTOR
(EN) EMITTER-SWITCHED BIPOLAR TRANSISTOR
(FR) TRANSISTOR BIPOLAIRE COMMUTE PAR L'EMETTEUR
Abstract: front page image
(DE)Die Erfindung betrifft eine Leistungsschaltung mit einem Emitter-gesteuerten Bipolartransistor (T2), dem ein MOS-Transistor (T3) nachgeschaltet ist. Der Bipolartransistor (T2) wird durch einen Mosfet-Transistor (Tl) angesteuert. Eine Begrenzerdiode (Dl) liegt zwischen dem Ausgang des MOS-Transistors (T3) und der Basis des Bipolartransistors (T2) und leitet den Rückstrom der Basis-Kollektor-Diode des Bipolartransistors (T2) zum Fußpunkt des ESBT (T2) weiter. Ferner ist eine Spannungsquelle (U) zwischen den Kollektor des Bipolartransistors (T2) und die Drain des Mosfet-Transistors (Tl) eingefügt.
(EN)The invention relates to a power circuit with a emitter-switched bipolar transistor (ESBT) (T2) and a MOS transistor (T3) connected downstream of the bipolar transistor. The bipolar transistor (T2) is controlled by a Mosfet transistor (T1). A zener diode (D1) which is disposed between the exit of the MOS transistor (T3) and the base of the bipolar transistor (T2) transmits the return current of the base collector diode of the bipolar transistor (T2) to the foot point of the ESBT (T2). Furthermore, a voltage source (U) is inserted between the collector of the bipolar transistor (T2) and the drain of the Mosfet transistor (T1).
(FR)L'invention concerne un circuit de puissance comprenant un transistor bipolaire (T2) commandé par l'émetteur et un transistor MOS (T3) implanté en aval du transistor bipolaire. Le transistor bipolaire (T2) est commandé par un transistor Mosfet (T1). Une diode Zener (D1), située entre la sortie du transistor MOS (T3) et la base du transistor bipolaire (T2), transmet le retour de courant de la diode base-collecteur du transistor bipolaire (T2) jusqu'au pied du transistor bipolaire commuté par l'émetteur (T2) ESBT-. Enfin une source de tension (U) est insérée entre le collecteur du transistor bipolaire (T2) et le drain du transistor Mosfet (T1).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: German (DE)
Filing Language: German (DE)