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1. WO2007044554 - AMORPHOUS SILICON WAVEGUIDES ON III/V SUBSTRATES WITH A BARRIER LAYER

Publication Number WO/2007/044554
Publication Date 19.04.2007
International Application No. PCT/US2006/039210
International Filing Date 06.10.2006
IPC
G02B 6/10 2006.01
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
10of the optical waveguide type
CPC
G02B 2006/12061
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
12035Materials
12061Silicon
G02B 2006/12147
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
12133Functions
12147Coupler
G02B 6/12002
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
12002Three-dimensional structures
G02B 6/12004
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
12004Combinations of two or more optical elements
G02B 6/136
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
13Integrated optical circuits characterised by the manufacturing method
136by etching
G02F 2201/501
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
2201Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
50Protective arrangements
501Blocking layers, e.g. against migration of ions
Applicants
  • LEE, Michael, J. [US]/[KR] (AllExceptUS)
  • LEE, Bong, Hoon [KR]/[KR] (AllExceptUS)
  • ABELES, Joseph [US]/[US] (UsOnly)
  • CAPEWELL, David [US]/[US] (UsOnly)
  • DIMARCO, Louis [US]/[US] (UsOnly)
  • KWAKERNAAK, Martin, H. [CH]/[US] (UsOnly)
  • MOHSENI, Hooman [IR]/[US] (UsOnly)
  • WHALEY, Ralph [US]/[US] (UsOnly)
  • YANG, Liyou [US]/[US] (UsOnly)
  • CHAN, Winston, Kong [US]/[US] (UsOnly)
  • KIM, George [US]/[US] (UsOnly)
Inventors
  • ABELES, Joseph
  • CAPEWELL, David
  • DIMARCO, Louis
  • KWAKERNAAK, Martin, H.
  • MOHSENI, Hooman
  • WHALEY, Ralph
  • YANG, Liyou
  • CHAN, Winston, Kong
  • KIM, George
  • MALEY, Nagendranath
Agents
  • NORTON, Todd, A.
Priority Data
60/724,51507.10.2005US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) AMORPHOUS SILICON WAVEGUIDES ON III/V SUBSTRATES WITH A BARRIER LAYER
(FR) GUIDES D'ONDE A BASE DE SILICIUM AMORPHE DEPOSE SUR DES SUBSTRATS DISPOSANT D'UNE COUCHE FORMANT BARRIERE
Abstract
(EN)
An optical device and a method of forming the same is described. The optical waveguide includes a substrate, an etch-stop layer adjacent to the substrate, a barrier layer adjacent to the etch-stop layer, and an active waveguide having a lower cladding layer adjacent to the barrier layer. Also described is a method of coupling to at least one active waveguide. The method includes etching an active waveguide with a high selectivity towards a crystallographic plane to form a sloped terminice with respect to a substrate upon which the active waveguide is formed, and depositing at least one other waveguide over the etched sloped terminice and at least a portion of the substrate, wherein the at least one other waveguide is photonically coupled to the etched active waveguide to provide photonic interconnectivity for the etched active waveguide.
(FR)
L'invention porte sur un dispositif optique et sur un procédé de formation dudit dispositif. Le guide d'onde optique comprend un substrat, une couche d'arrêt à la gravure adjacente au substrat, une couche formant barrière adjacente à la couche d'arrêt à la gravure, et un guide d'onde actif possédant une couche de revêtement inférieure adjacente à la couche formant barrière. L'invention porte également sur un procédé de couplage à au moins un guide d'onde actif. Le procédé consiste à graver un guide d'onde actif, présentant une sélectivité élevée, en direction d'un plan cristallographique pour former une paroi latérale inclinée par rapport à un substrat sur lequel est formé le guide d'onde actif ; et à déposer au moins un autre guide d'onde sur la paroi latérale gravée et sur au moins une partie du substrat, ledit guide d'onde étant couplé phoniquement au guide d'onde actif gravé de manière à fournir une interconnectivité phonique au guide d'onde actif gravé.
Also published as
EP06816439
EP6816439
Latest bibliographic data on file with the International Bureau