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1. (WO2007042520) SELF-ORGANIZED PIN-TYPE NANOSTRUCTURES, AND PRODUCTION THEREOF ON SILICON
Latest bibliographic data on file with the International Bureau
Pub. No.: WO/2007/042520 International Application No.: PCT/EP2006/067248
Publication Date: 19.04.2007 International Filing Date: 10.10.2006
Chapter 2 Demand Filed: 27.07.2007
IPC:
H01L 21/3065 (2006.01) ,H01L 31/18 (2006.01) ,H01L 31/0216 (2006.01) ,H01L 21/308 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0216
Coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
308
using masks
Applicants:
X-FAB SEMICONDUCTOR FOUNDRIES AG [DE/DE]; Haarbergstrasse 67 99097 Erfurt, DE (AllExceptUS)
TECHNISCHE UNIVERSITÄT ILMENAU [DE/DE]; Ehrenbergstrasse 29 98693 Ilmenau, DE (AllExceptUS)
BACH, Konrad [DE/DE]; DE (UsOnly)
GAEBLER, Daniel [DE/DE]; DE (UsOnly)
FISCHER, Michael [DE/DE]; DE (UsOnly)
STUBENRAUCH, Mike [DE/DE]; DE (UsOnly)
Inventors:
BACH, Konrad; DE
GAEBLER, Daniel; DE
FISCHER, Michael; DE
STUBENRAUCH, Mike; DE
Agent:
LEONHARD, Reimund ; Leonhard Olgemoeller Fricke Postfach 10 09 62 80083 Muenchen, DE
Priority Data:
10 2005 048 366.610.10.2005DE
Title (DE) SELBSTORGANISIERTE NADELARTIGE NANO-STRUKTUREN UND IHRE HERSTELLUNG AUF SILIZIUM
(EN) SELF-ORGANIZED PIN-TYPE NANOSTRUCTURES, AND PRODUCTION THEREOF ON SILICON
(FR) NANOSTRUCTURES EN AIGUILLES AUTO-ORGANISEES ET LEUR PRODUCTION SUR DU SILICIUM
Abstract:
(DE) Mit Hilfe eines RIE-Ätzverfahrens für Silizium (3), wird ohne jegliche zusätzliche Strukturierungsmaßnahme (e-beam, Interferenzlithographie, o. a.) durch Auswahl der Gasanteile des Ätzplasmas in einer Selbstorganisation eine kristallfehlerfreie, nadelförmige Struktur (4,4a) mit großem Aspektverhältnis und mit Nanodimensionen auf der Oberfläche von Siliziumscheiben erzeugt, wodurch unter anderem eine breitbandige Entspiegelung erreicht wird, die eine vielfältige Verwendung finden kann.
(EN) According to the invention, a self-organized pin-type structure (4, 4a) that has no crystal defects, a great aspect ratio, and nano dimensions is produced on the surface of silicon wafers with the aid of an RIE etching process for silicon (3) by selecting the gas concentration of the etching plasma, without taking any additional structuring measure (e-beam, interference lithography, or others), thus obtaining broadband antireflection that can be used in many different ways.
(FR) Selon l'invention, une structure en aiguilles (4, 4a) sans imperfections cristallines présentant un rapport d'aspect élevé et des dimensions nanométriques peut être produite sur la surface de tranches de silicium par un procédé de gravure ionique réactive pour silicium (3) sans opération de texturation additionnelle (faisceau d'électrons, lithographie interférentielle, etc.) par sélection de la concentration de gaz du plasma de gravure selon une auto-organisation, ce qui permet d'obtenir notamment une couche antireflet à large bande présentant de multiples possibilités d'utilisation.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)