Processing

Please wait...

Settings

Settings

Goto Application

1. WO2007042520 - SELF-ORGANIZED PIN-TYPE NANOSTRUCTURES, AND PRODUCTION THEREOF ON SILICON

Publication Number WO/2007/042520
Publication Date 19.04.2007
International Application No. PCT/EP2006/067248
International Filing Date 10.10.2006
Chapter 2 Demand Filed 27.07.2007
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0216 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 21/308 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
CPC
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/3086
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
3083characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
3086characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
H01L 21/32137
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32133by chemical means only
32135by vapour etching only
32136using plasmas
32137of silicon-containing layers
H01L 21/32139
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32139using masks
Applicants
  • X-FAB SEMICONDUCTOR FOUNDRIES AG [DE]/[DE] (AllExceptUS)
  • TECHNISCHE UNIVERSITÄT ILMENAU [DE]/[DE] (AllExceptUS)
  • BACH, Konrad [DE]/[DE] (UsOnly)
  • GAEBLER, Daniel [DE]/[DE] (UsOnly)
  • FISCHER, Michael [DE]/[DE] (UsOnly)
  • STUBENRAUCH, Mike [DE]/[DE] (UsOnly)
Inventors
  • BACH, Konrad
  • GAEBLER, Daniel
  • FISCHER, Michael
  • STUBENRAUCH, Mike
Agents
  • LEONHARD, Reimund
Priority Data
10 2005 048 366.610.10.2005DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) SELBSTORGANISIERTE NADELARTIGE NANO-STRUKTUREN UND IHRE HERSTELLUNG AUF SILIZIUM
(EN) SELF-ORGANIZED PIN-TYPE NANOSTRUCTURES, AND PRODUCTION THEREOF ON SILICON
(FR) NANOSTRUCTURES EN AIGUILLES AUTO-ORGANISEES ET LEUR PRODUCTION SUR DU SILICIUM
Abstract
(DE)
Mit Hilfe eines RIE-Ätzverfahrens für Silizium (3), wird ohne jegliche zusätzliche Strukturierungsmaßnahme (e-beam, Interferenzlithographie, o. a.) durch Auswahl der Gasanteile des Ätzplasmas in einer Selbstorganisation eine kristallfehlerfreie, nadelförmige Struktur (4,4a) mit großem Aspektverhältnis und mit Nanodimensionen auf der Oberfläche von Siliziumscheiben erzeugt, wodurch unter anderem eine breitbandige Entspiegelung erreicht wird, die eine vielfältige Verwendung finden kann.
(EN)
According to the invention, a self-organized pin-type structure (4, 4a) that has no crystal defects, a great aspect ratio, and nano dimensions is produced on the surface of silicon wafers with the aid of an RIE etching process for silicon (3) by selecting the gas concentration of the etching plasma, without taking any additional structuring measure (e-beam, interference lithography, or others), thus obtaining broadband antireflection that can be used in many different ways.
(FR)
Selon l'invention, une structure en aiguilles (4, 4a) sans imperfections cristallines présentant un rapport d'aspect élevé et des dimensions nanométriques peut être produite sur la surface de tranches de silicium par un procédé de gravure ionique réactive pour silicium (3) sans opération de texturation additionnelle (faisceau d'électrons, lithographie interférentielle, etc.) par sélection de la concentration de gaz du plasma de gravure selon une auto-organisation, ce qui permet d'obtenir notamment une couche antireflet à large bande présentant de multiples possibilités d'utilisation.
Latest bibliographic data on file with the International Bureau