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1. WO2007041650 - SINGLE BATH ELECTRODEPOSITED CU(IN,GA)SE2 THIN FILMS USEFUL AS PHOTOVOLTAIC DEVICES

Publication Number WO/2007/041650
Publication Date 12.04.2007
International Application No. PCT/US2006/038867
International Filing Date 03.10.2006
IPC
C25D 3/56 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
3Electroplating; Baths therefor
02from solutions
56of alloys
C25D 5/18 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
5Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
18Electroplating using modulated, pulsed or reversing current
H01L 31/032 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154
CPC
C25D 3/56
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
3Electroplating: Baths therefor
02from solutions
56of alloys
C25D 5/18
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
5Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
18Electroplating using modulated, pulsed or reversing current
H01L 31/0322
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
0322comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Y02E 10/541
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
541CuInSe2 material PV cells
Applicants
  • DAVIS, JOSEPH AND NEGLEY [US]/[US] (AllExceptUS)
  • UNIVERSITY OF DELAWARE [US]/[US] (AllExceptUS)
  • DOBSON, Kevin, D. [NZ]/[US] (UsOnly)
  • CALIXTO, M., Estela [MX]/[US] (UsOnly)
Inventors
  • DOBSON, Kevin, D.
  • CALIXTO, M., Estela
Agents
  • CULLMAN, Louis, C.
Priority Data
60/723,50503.10.2005US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SINGLE BATH ELECTRODEPOSITED CU(IN,GA)SE2 THIN FILMS USEFUL AS PHOTOVOLTAIC DEVICES
(FR) PELLICULES MINCES AU CU(IN,GA)SE2 DÉPOSÉES PAR VOIE GALVANIQUE À UN BAIN UTILES COMME DISPOSITIFS PHOTOVOLTAÏQUES
Abstract
(EN)
Single bath electrodeposition of polycrystalline Cu(In1Ga)Se2 thin films for photovoltaic applications is disclosed. Specifically, Cu(In1Ga)Se2 was deposited onto Mo electrodes from low concentration buffered (pH 2.5) aqueous baths containing CuCI2, InCI3, GaCI3 and H2SeO3. Moreover, buffered aqueous baths are disclosed wherein Se4+/Cu2+ concentration ratios were controlled to optimize Se and Cu levels, while In3+ concentration was adjusted to control deposited In and Ga. Further disclosed are pre- and post-deposition processing methods resulting in smooth, compact, crack-free films of near stoichiometric values.
(FR)
La présente invention concerne la déposition par voie galvanique à un bain de pellicules minces polycristallines au Cu(In,Ga)Se2 pour des applications photovoltaïques. Spécifiquement, du Cu(In,Ga)Se2 a été déposé sur des électrodes en Mo à partir de bains aqueux tamponnés (pH 2,5) à faible concentration contenant du CuCI2, de l’InCI3, du GaCI3 et du H2SeO3. La présente invention concerne de plus des bains aqueux tamponnés dont les rapports de concentration Se4+/Cu2+ ont été contrôlés pour optimiser les niveaux de Se et de Cu, tandis que la concentration en In3+ a été ajustée pour contrôler l'In et le Ga déposés. La présente invention concerne en outre les procédés de traitement pré et post-déposition résultant en des pellicules lisses, compactes et dépourvues de fissures de valeurs presque stœchiométriques.
Also published as
US11611717
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