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1. WO2007037654 - III-NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE

Publication Number WO/2007/037654
Publication Date 05.04.2007
International Application No. PCT/KR2006/003929
International Filing Date 29.09.2006
IPC
H01L 33/22 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/32 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
CPC
H01L 21/02458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02455Group 13/15 materials
02458Nitrides
H01L 21/0254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02538Group 13/15 materials
0254Nitrides
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • EPIVALLEY CO., LTD. [KR]/[KR] (AllExceptUS)
  • PARK, Eun-Hyun [KR]/[KR] (UsOnly)
  • YOO, Tae-Kyung [KR]/[KR] (UsOnly)
Inventors
  • PARK, Eun-Hyun
  • YOO, Tae-Kyung
Priority Data
10-2005-009120629.09.2005KR
Publication Language English (EN)
Filing Language Korean (KO)
Designated States
Title
(EN) III-NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT SEMI-CONDUCTEUR DE COMPOSÉ NITRURE DU GROUPE III
Abstract
(EN)
The present invention discloses a Ill-nitride compound semiconductor light emitting device including a substrate, and a plurality of nitride compound semiconductor layers which are grown on the substrate and which include an active layer for generating light by recombination of an electron and a hole. Here, the plurality of nitride compound semiconductor layers include a rough surface region between the substrate and the active layer, the rough surface region formed by removing the plurality of nitride compound semiconductor layers from a side thereof.
(FR)
La présente invention concerne un dispositif semi-conducteur de composé nitrure du groupe III comprenant un substrat, et une pluralité de couches semi-conductrices de composé nitrure, qui sont développées sur le substrat, et qui comprennent une couche active pour générer la lumière par recombinaison d’un électron, et un orifice. Ici, la pluralité de couches semi-conductrices de composé nitrure comprend une zone de surface rugueuse entre le substrat et la couche active, la surface rugueuse étant formée par l’enlèvement de la pluralité de couches semi-conductrices de composé nitrure de ladite surface.
Also published as
EP06799012
EP6799012
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