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1. WO2007037219 - LASER DICING DEVICE AND LASER DICING METHOD

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Publication Number WO/2007/037219
Publication Date 05.04.2007
International Application No. PCT/JP2006/319035
International Filing Date 26.09.2006
Chapter 2 Demand Filed 24.04.2007
IPC
H01L 21/301 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
B23K 26/38 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
36Removing material
38by boring or cutting
B23K 26/40 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
36Removing material
40taking account of the properties of the material involved
B23K 101/40 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
101Articles made by soldering, welding or cutting
36Electric or electronic devices
40Semiconductor devices
CPC
B23K 2101/40
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
2101Articles made by soldering, welding or cutting
36Electric or electronic devices
40Semiconductor devices
B23K 2103/50
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
2103Materials to be soldered, welded or cut
50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
B23K 26/03
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
03Observing, e.g. monitoring, the workpiece
B23K 26/40
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
36Removing material
40taking account of the properties of the material involved
B23K 26/53
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
50Working by transmitting the laser beam through or within the workpiece
53for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
Applicants
  • 株式会社東京精密 Tokyo Seimitsu Co., Ltd. [JP]/[JP] (AllExceptUS)
  • 酒谷 康之 SAKAYA, Yasuyuki [JP]/[JP] (UsOnly)
Inventors
  • 酒谷 康之 SAKAYA, Yasuyuki
Agents
  • 松浦 憲三 MATSUURA, Kenzo
Priority Data
2005-28258728.09.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) LASER DICING DEVICE AND LASER DICING METHOD
(FR) DISPOSITIF ET PROCÉDÉ DE DÉCOUPAGE EN DÉS À LASER
(JA) レーザーダイシング装置及びレーザーダイシング方法
front page image
Abstract
(EN)
A laser dicing device and method for carrying out high-speed dicing with high quality without causing defective machining even if a wafer having a different thickness is fed. The laser dicing device comprises measuring means for measuring the thickness of a wafer (W), recording means storing a database where a modification region forming condition corresponding to the thickness of the wafer (W) is described, and control means for controlling the laser dicing device by automatically selecting the modification region forming condition matching the measured thickness of the wafer (W) from the database according to the thickness of the wafer measured by the measuring means. Since the most suitable modification region forming condition is automatically determined, no defective machining occurs even if a wafer (W) having a different thickness is fed, and quick dicing with high quality can be carried out.
(FR)
La présente invention concerne un dispositif et un procédé de découpage en dés à laser pour effectuer une découpe en dés à grande vitesse de haute qualité sans provoquer d'usinage défectueux même si une tranche ayant une épaisseur différente est introduite. Le dispositif de découpage en dés à laser comprend des moyens de mesure afin de mesurer l'épaisseur d'une tranche (W), des moyens d'enregistrement stockant une base de données dans laquelle une condition de formation de région de modification correspondant à l'épaisseur d'une tranche (W) est décrite, et des moyens de commande afin de commander le dispositif de découpage en dés en sélectionnant automatiquement la condition de formation de région de modification correspondant à l'épaisseur mesurée de la tranche (W) à partir de la base de données selon l'épaisseur de la tranche mesurée par les moyens de mesure. Étant donné que la condition de formation de région de modification la plus adaptée est déterminée automatiquement, aucun usinage défectueux ne survient même si une tranche (W) ayant une épaisseur différente est introduite, et un découpage en dés de haute qualité peut être exécuté.
(JA)
　厚さの違うウェーハが供給された場合にも加工不良を発生させず、高品質なダイシングが迅速に行えるレーザーダイシング装置及びレーザーダイシング方法を提供すること。レーザーダイシング装置において、ウェーハＷの厚さを測定する測定手段と、ウェーハＷの各厚さに対応した改質領域形成条件が記載されたデータベースが保存されている記録手段と、測定手段により測定されたウェーハの厚さに基づき、データベースから測定されたウェーハＷの厚さに適合した改質領域形成条件を自動に選択してレーザーダイシング装置を制御する制御手段とを備えたことにより、最適な改質領域形成条件が自動的に設定されるため、厚さの違うウェーハＷが供給された場合にも加工不良を発生させず、高品質なダイシングを迅速に行うことが可能となる。
Also published as
DE112006002502
EP06810560
EP6810560
JP2007095952
KR1020080061363
US20090035879
Latest bibliographic data on file with the International Bureau
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