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1. WO2007035199 - DEPOSITION APPARATUS FOR THE FORMATION OF POLYCRYSTALLINE MATERIALS ON MOBILE SUBSTRATES

Publication Number WO/2007/035199
Publication Date 29.03.2007
International Application No. PCT/US2006/028771
International Filing Date 25.07.2006
IPC
C23C 16/00 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
CPC
C23C 16/24
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
24Deposition of silicon only
C23C 16/545
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
54Apparatus specially adapted for continuous coating
545for coating elongated substrates
H01L 27/1214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
H01L 29/78603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78603characterised by the insulating substrate or support
Applicants
  • ENERGY CONVERSION DEVICES, INC. [US]/[US] (AllExceptUS)
  • OVSHINSKY, Stanford, R. [US]/[US] (UsOnly)
Inventors
  • OVSHINSKY, Stanford, R.
Agents
  • BRAY, Kevin, L.
Priority Data
11/230,81920.09.2005US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DEPOSITION APPARATUS FOR THE FORMATION OF POLYCRYSTALLINE MATERIALS ON MOBILE SUBSTRATES
(FR) APPAREIL DE DÉPOSITION POUR LA FORMATION DE MATÉRIAUX POLYCRISTALLINS SUR DES SUBSTRATS MOBILES
Abstract
(EN)
A deposition apparatus and method for continuously depositing a polycrystalline material such as polysilicon or polycrystalline SiGe layer on a mobile discrete or continuous web substrate. The apparatus includes a pay-out unit for dispensing a discrete or continuous web substrate and a deposition unit that receives the discrete or continuous web substrate and deposits a series of one or more thin film layers thereon in a series of one or more deposition or processing chambers. In a preferred embodiment, polysilicon is formed by first depositing a layer of amorphous or microcrystalline silicon using PECVD and transforming said layer to polysilicon through heating or annealing with one or more lasers, lamps, furnaces or other heat sources. Laser annealing utilizing a pulsed excimer is a preferred embodiment. By controlling the processing temperature, temperature distribution within a layer of amorphous or microcrystalline silicon etc., the instant deposition apparatus affords control over the grain size of polysilicon. Passivation of polysilicon occur through treatment with a hydrogen plasma. Layers of polycrystalline SiGe may similarly be formed. The instant deposition apparatus provides for the continuous deposition of electronic devices and structures that include a layer of a polycrystalline material such as polysilicon and/or polycrystalline SiGe. Representative devices include photovoltaic devices and thin film transistors. The instant deposition apparatus also provides for the continuous deposition of chalcogenide switching or memory materials alone or in combination with other metal, insulating, and/or semiconducting layers.
(FR)
Appareil de déposition et procédé de déposition continue d’un matériau polycristallin comme une couche de polysilicium ou une couche de SiGe polycristallin sur un substrat à bande continue ou discrète mobile. L’appareil comprend une unité de distribution permettant de dispenser un substrat à bande continue ou discrète et une unité de déposition qui reçoit le substrat à bande continue ou discrète et dépose une série d’une ou de plusieurs couches en film mince sur celui-ci dans une série d’une ou de plusieurs chambres de déposition ou de traitement. Selon un mode de réalisation préféré, le polysilicium est formé tout d’abord par la déposition d’une couche de silicium amorphe ou microcristallin par PECVD et par la transformation de ladite couche en polysilicium par chauffage ou recuit avec un ou plusieurs lasers, lampes, fours ou autres sources thermiques. Un recuit au laser utilisant un excimère pulsé est un mode de réalisation préféré. En régulant la température de traitement, la distribution de température dans une couche de silicium amorphe ou microcristallin, etc., l’appareil de déposition de l'invention permet de réguler la granulométrie du polysilicium. La passivation du polysilicium se produit suite à un traitement au plasma hydrogène. Des couches de SiGe polycristallin peuvent être élaborées de manière similaire. L’appareil de déposition de l'invention permet la déposition continue de dispositifs électroniques et de structures englobant une couche de matériau polycristallin comme le polysilicium et/ou le SiGe polycristallin. Les dispositifs représentatifs comprennent des dispositifs photovoltaïques et des transistors à film mince. L’appareil de déposition de l'invention permet aussi la déposition continue de matériaux de mémoire ou de commutation de chalcogénure seuls ou en combinaison avec d’autres couches de métal,isolantes et/ou semi-conductrices.
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