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1. WO2007034553 - SEMICONDUCTOR DEVICE AND ITS FABRICATION METHOD

Publication Number WO/2007/034553
Publication Date 29.03.2007
International Application No. PCT/JP2005/017513
International Filing Date 22.09.2005
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/8238 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8238Complementary field-effect transistors, e.g. CMOS
H01L 27/092 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
092complementary MIS field-effect transistors
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
H01L 21/26513
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
26506in group IV semiconductors
26513of electrically active species
H01L 21/823807
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823807with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
H01L 21/823814
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823814with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
H01L 21/84
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
84the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 27/1203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1203the substrate comprising an insulating body on a semiconductor body, e.g. SOI
H01L 29/1083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
107Substrate region of field-effect devices
1075of field-effect transistors
1079with insulated gate
1083with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
Applicants
  • 富士通株式会社 FUJITSU LIMITED [JP]/[JP] (AllExceptUS)
  • 川合 真一 KAWAI, Shinichi [JP]/[JP] (UsOnly)
Inventors
  • 川合 真一 KAWAI, Shinichi
Agents
  • 服部 毅巖 HATTORI, Kiyoshi
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND ITS FABRICATION METHOD
(FR) DISPOSITIF SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体装置およびその製造方法
Abstract
(EN)
The carrier mobility of a transistor using an SOI substrate is improved. A thin Si layer (4) is formed over a Si substrate (2) with a buried insulating film (3) interposed between them. A gate electrode (7) is formed over the thin Si layer (4) with a gate insulating film (6) interposed between them. On both sides, S/D layers (11) are formed that reach the Si substrate (2) through the Si layer (4) and the buried insulating film (3) and that have a crystal structure having a different lattice constant from those of the Si substrate (2) and the Si layer (4). A channel region (9) is formed within the Si layer (4), so that the short channel effect is suppressed. The S/D layers (11) having a different crystal structure from the Si crystal is formed so thick that they reach the Si substrate (2). Consequently, enough stress can be generated in the channel region (9), enabling the carrier mobility to be improved effectively.
(FR)
La présente invention permet d’améliorer la mobilité des porteurs d’un transistor en utilisant un substrat SOI. Une mince couche de Si (4) est formée sur un substrat de Si (2), une pellicule isolante enterrée (3) étant intercalée entre eux. Une électrode de gâchette (7) est disposée sur la couche mince de Si (4), une pellicule d’isolation de gâchette (6) étant intercalée entre elles. De chaque côté, on dispose des couches S/D (11) qui atteignent le substrat de Si (2) à travers la couche de Si (4) et la pellicule isolante enterrée (3) et qui comportent une structure cristalline présentant une constante de réseau cristallin différente de celles du substrat de Si (2) et de la couche de Si (4). Une zone de canal (9) est creusée dans la couche de Si (4) de sorte que l'effet de canal court est supprimé. Les couches S/D (11) comportant une structure cristalline différente du cristal de Si sont si épaisses qu'elles atteignent le substrat de Si (2). Par conséquent, une contrainte suffisante peut être générée dans la zone de canal (9), ce qui améliore efficacement la mobilité des porteurs.
(JA)
 SOI基板を用いたトランジスタのキャリア移動度を向上させる。  Si基板(2)上に埋め込み絶縁膜(3)を介して形成された薄いSi層(4)上にゲート絶縁膜(6)を介してゲート電極(7)を形成し、その両側に、Si層(4)および埋め込み絶縁膜(3)を貫通してSi基板(2)に達しSi基板(2)やSi層(4)とは格子定数の異なる結晶構造のS/D層(11)を形成する。チャネル領域(9)がSi層(4)内に形成されることにより、短チャネル効果が抑制され、また、Si結晶と異なる結晶構造のS/D層(11)をSi基板(2)に達するように厚く形成することにより、チャネル領域(9)に充分な応力を発生させて、効果的にキャリア移動度を向上させることが可能になる。                                                                               
Also published as
EP5785997
EP05785997
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