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1. WO2007032195 - PATTERN FORMING MATERIAL, PATTERN FORMING APPARATUS AND PATTERN FORMING PROCESS

Publication Number WO/2007/032195
Publication Date 22.03.2007
International Application No. PCT/JP2006/316694
International Filing Date 25.08.2006
IPC
G03F 7/004 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
C08F 299/00 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
299Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
G03F 7/027 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
G03F 7/033 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
032with binders
033the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
C08F 283/006
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
283Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
006on to polymers provided for in C08G18/00
C08F 299/00
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
299Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
G03F 7/0007
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
0007Filters, e.g. additive colour filters; Components for display devices
G03F 7/001
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
001Phase modulating patterns, e.g. refractive index patterns
G03F 7/031
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
028with photosensitivity-increasing substances, e.g. photoinitiators
031Organic compounds not covered by group G03F7/029
G03F 7/033
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
032with binders
033the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
Applicants
  • 富士フイルム株式会社 FUJIFILM Corporation [JP]/[JP] (AllExceptUS)
  • 南 一守 MINAMI, Kazumori [JP]/[JP] (UsOnly)
  • 佐藤 守正 SATO, Morimasa [JP]/[JP] (UsOnly)
Inventors
  • 南 一守 MINAMI, Kazumori
  • 佐藤 守正 SATO, Morimasa
Agents
  • 廣田 浩一 HIROTA, Koichi
Priority Data
2005-26687614.09.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PATTERN FORMING MATERIAL, PATTERN FORMING APPARATUS AND PATTERN FORMING PROCESS
(FR) MATERIAU DE FORMATION DE MOTIF, APPAREIL DE FORMATION DE MOTIF ET PROCEDE DE FORMATION DE MOTIF
(JA) パターン形成材料、並びにパターン形成装置及びパターン形成方法
Abstract
(EN)
The invention aims at providing a pattern forming material which little suffers from area defects, fog caused by a color developer, and break of unexposed film and exhibits high resolution, high tent film strength, and excellent removability after pattern formation and which can form finer patterns; a pattern forming apparatus provided with the material; and a pattern forming process by use of the material. The invention provides a pattern forming material having a photosensitive layer which comprises a binder, a polymerizable compound, a photopolymerization initiator, a fused heterocyclic compound, a polymerization inhibitor, a color developer and an organic solvent, wherein the binder has an acid value of 50 to 400mgKOH/g and a mass-average molecular weight of 10,000 to 100,000; the polymerizable compound is a compound having a urethane group and/or a compound having an aryl group; and the organic solvent is at least one member selected from among ketones, alcohols and ethers with the content thereof being 0.5% by mass or below.
(FR)
L'invention concerne un matériau de formation de motif qui est très peu sensible aux défauts de surface, au voile provoqué par un révélateur chromogène, et à la cassure provoquée par un film non exposé et qui présente une résolution élevée, une résistance de film à tente élevée et une excellente capacité d'enlèvement après la formation de motif, et qui peut former des motifs plus fins ; l'invention porte également sur un appareil de formation de motif utilisé avec le matériau ; et sur un procédé de formation de motif à l'aide dudit matériau. L'invention concerne un matériau de formation de motif ayant une couche photosensible qui renferme un liant, un composé polymérisable, un initiateur de photopolymérisation, un composé hétérocyclique fondu, un inhibiteur de polymérisation, un révélateur chromogène et un solvant organique, le liant possédant une valeur d'acide comprise entre 50 et 400mgKOH/g et un poids moléculaire dont la masse moyenne est comprise entre 10,000 et 100,000; le composé polymérisable est un composé possédant un groupe uréthane et/ou un composé possédant un groupe aryle ; et le solvant organique est au moins un élément sélectionné parmi des cétones, des alcools et des éthers dont la teneur est égale ou inférieure à.5% en masse.
(JA)
 本発明は、面状故障が少なく、発色剤による光カブリを防止でき、未露光膜の破れが少なく、解像度が高く、テント膜強度が強く、かつ、パターン形成後の剥離性が良好で、より高精細なパターンを形成可能であるパターン形成材料、並びに該パターン形成材料を備えたパターン形成装置及び前記パターン形成材料を用いたパターン形成方法を提供することを目的とする。  このため、感光層が、バインダー、重合性化合物、光重合開始剤、ヘテロ縮環系化合物、重合禁止剤、発色剤、及び有機溶剤を含み、  バインダーの酸価が、50~400mgKOH/gであり、かつ、質量平均分子量が、10,000~100,000であり、  重合性化合物が、ウレタン基を有する化合物及びアリール基を有する化合物の少なくともいずれかを含有し、  有機溶剤が、ケトン類、アルコール類、及びエーテル類から選択される少なくとも1種であり、かつ、含有量が0.5質量%以下であるパターン形成材料を提供する。    
Also published as
EP06783034
EP6783034
Latest bibliographic data on file with the International Bureau