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1. WO2007029822 - MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME

Publication Number WO/2007/029822
Publication Date 15.03.2007
International Application No. PCT/JP2006/317879
International Filing Date 08.09.2006
IPC
G03F 7/11 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
G03F 7/11
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/2041
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
2041in the presence of a fluid, e.g. immersion; using fluid cooling means
Applicants
  • 東京応化工業株式会社 TOKYO OHKA KOGYO CO., LTD. [JP]/[JP] (AllExceptUS)
  • 平野 智之 HIRANO, Tomoyuki [JP]/[JP] (UsOnly)
  • 遠藤 浩太朗 ENDO, Kotaro [JP]/[JP] (UsOnly)
  • 石塚 啓太 ISHIDUKA, Keita [JP]/[JP] (UsOnly)
Inventors
  • 平野 智之 HIRANO, Tomoyuki
  • 遠藤 浩太朗 ENDO, Kotaro
  • 石塚 啓太 ISHIDUKA, Keita
Agents
  • 正林 真之 SHOBAYASHI, Masayuki
Priority Data
2005-26306509.09.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME
(FR) MATERIAU POUR LA FORMATION D’UN FILM PROTECTEUR, ET PROCEDE DE FORMATION D’UN MOTIF DE PHOTORESIST UTILISANT CE MATERIAU
(JA) 保護膜形成用材料およびこれを用いたホトレジストパターン形成方法
Abstract
(EN)
[PROBLEMS] To provide a material for protective film formation that can simultaneously prevent a change in quality of a resist film during liquid immersion exposure and a change in quality of a liquid for liquid immersion exposure used, and, at the same time, can form a resist pattern having a good shape without increasing the number of treatment steps. [MEANS FOR SOLVING PROBLEMS] A material for protective film formation, comprising at least an alkali-soluble polymer comprising constitutional units represented by general formula (1): wherein R1 represents a hydrogen atom or a methyl group; R2 represents an alkylene chain having 1 to 5 carbon atoms; R3 represents a fluorinated alkylene chain having 1 to 10 carbon atoms in which a part or all of hydrogen atoms have been substituted by a fluorine atom; and m is a repeating unit.
(FR)
L’invention concerne un matériau pour la formation d’un film protecteur pouvant à la fois empêcher une modification de la qualité d'un film de résist pendant une immersion dans un liquide et une modification de la qualité du liquide utilisé pour ladite immersion, et pouvant en même temps former un motif de résist ayant une forme convenable sans augmenter le nombre d’étapes de traitement. Le matériau pour la formation d’un film protecteur selon l'invention comprend au moins un polymère soluble dans les alcalis comprenant des unités constitutionnelles représentées par la formule générale (1) : dans laquelle R1 représente un atome d’hydrogène ou un groupe méthyle ; R2 représente une chaîne alkylène ayant de 1 à 5 atomes de carbone ; R3 représente une chaîne alkylène fluorée ayant de 1 à 10 atomes de carbone dans laquelle une partie de ou l’ensemble des atomes d’hydrogène a été substitué par un atome de fluor ; et m est une unité de répétition.
(JA)
not available
Also published as
EP06783239
EP6783239
Latest bibliographic data on file with the International Bureau