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Machine translation
1. (WO2007021385) SEQUENTIAL DEPOSITION PROCESS FOR FORMING Si-CONTAINING FILMS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/021385    International Application No.:    PCT/US2006/025801
Publication Date: 22.02.2007 International Filing Date: 03.07.2006
IPC:
C23C 16/00 (2006.01), H01L 21/20 (2006.01), H01L 21/302 (2006.01)
Applicants: TOKYO ELECTRON LIMITED [JP/JP]; 3-6, Akasaka 5-chome, Minato-ku, Tokyo 107-8481 (JP) (For All Designated States Except US).
DIP, Anthony [US/US]; (US) (For US Only).
LEITH, Allen, John [US/US]; (US) (For US Only).
OH, Seungho [KR/US]; (US) (For US Only)
Inventors: DIP, Anthony; (US).
LEITH, Allen, John; (US).
OH, Seungho; (US)
Agent: WEIHROUCH, Steven, P.; OBLON, SPIVAK, MCCLELLAND, MAIER & NEUSTADT, P.C., 1940 Duke Street, Alexandria, VA 22314 (US)
Priority Data:
11/206,199 18.08.2005 US
Title (EN) SEQUENTIAL DEPOSITION PROCESS FOR FORMING Si-CONTAINING FILMS
(FR) PROCEDE DE DEPOT SEQUENTIEL DESTINE A LA FORMATION DE FILMS CONTENANT DU SI
Abstract: front page image
(EN)A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film to reduce the chlorine content of the Si film. The Si film may be deposited selectively or non-selectively on the substrate and the deposition may be self-limiting or non-self-limiting. Other embodiments provide a method for forming SiGe films in a sequential deposition process.
(FR)L'invention concerne un procédé permettant de former un film de Si dans un procédé de dépôt séquentiel. Ce procédé consiste à prendre un substrat dans une chambre de traitement, à former un film de Si chloré par exposition du substrat à un gaz de silane chloré, et à graver par voie sèche le film de Si chloré pour réduire le contenu de chlore du film de Si. Le film de Si peut être déposé sélectivement ou non sélectivement sur le substrat et le dépôt peut être auto-limitant ou non auto-limitant. D'autres modes de réalisation fournissent un procédé permettant de former des films SiGe dans un procédé de dépôt séquentiel.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)