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1. (WO2007021030) INFRARED SENSOR UNIT AND PROCESS OF FABRICATING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/021030    International Application No.:    PCT/JP2006/316444
Publication Date: 22.02.2007 International Filing Date: 16.08.2006
IPC:
G01J 5/20 (2006.01), H01L 27/146 (2006.01)
Applicants: MATSUSHITA ELECTRIC WORKS, LTD. [JP/JP]; 1048, Oaza-Kadoma, Kadoma-shi, Osaka, 5718686 (JP) (For All Designated States Except US).
YAMANAKA, Hiroshi [JP/JP]; (JP) (For US Only).
ICHIHARA, Tsutomu [JP/JP]; (JP) (For US Only).
WATABE, Yoshifumi [JP/JP]; (JP) (For US Only).
TSUJI, Koji [JP/JP]; (JP) (For US Only).
KIRIHARA, Masao [JP/JP]; (JP) (For US Only).
YOSHIHARA, Takaaki [JP/JP]; (JP) (For US Only).
NISHIJIMA, Yoichi [JP/JP]; (JP) (For US Only).
HYODO, Satoshi [JP/JP]; (JP) (For US Only)
Inventors: YAMANAKA, Hiroshi; (JP).
ICHIHARA, Tsutomu; (JP).
WATABE, Yoshifumi; (JP).
TSUJI, Koji; (JP).
KIRIHARA, Masao; (JP).
YOSHIHARA, Takaaki; (JP).
NISHIJIMA, Yoichi; (JP).
HYODO, Satoshi; (JP)
Agent: NISHIKAWA, Yoshikiyo; Hokuto Patent Attorneys Office, Umeda-Daiichiseimei Bldg. 5F Floor, 12-17, Umeda 1-chome, Kita-ku, Osaka-shi, Osaka 530-0001 (JP)
Priority Data:
2005-236868 17.08.2005 JP
Title (EN) INFRARED SENSOR UNIT AND PROCESS OF FABRICATING THE SAME
(FR) UNITÉ DE CAPTEUR INFRAROUGE ET SON PROCÉDÉ DE FABRICATION
Abstract: front page image
(EN)An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate (10). A dielectric top layer (12) covers the substrate to conceal the semiconductor device (20) formed in the top surface of the substrate. The thermal infrared sensor (30) carried on a sensor mount (40) which is supported above the semiconductor device by means of a thermal insulation support (52). The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.
(FR)L’unité de capteur infrarouge selon la présente invention comporte un capteur infrarouge thermique et un dispositif semi-conducteur associé communément développé sur un substrat semi-conducteur (10). Une couche supérieure diélectrique (12) recouvre le substrat pour dissimuler le dispositif semi-conducteur (20) formé sur la surface supérieure du substrat. Le capteur infrarouge thermique (30) est porté sur un montage de capteur (40) placé au-dessus du dispositif semi-conducteur au moyen d’un support à isolation thermique (52). Le montage de capteur et le support sont constitués d’un matériau poreux qui est superposé sur le dessus de la couche diélectrique supérieure.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)