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Machine translation
1. (WO2007018856) IC WITH ON-DIE POWER-GATING CIRCUIT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/018856    International Application No.:    PCT/US2006/026381
Publication Date: 15.02.2007 International Filing Date: 06.07.2006
IPC:
G06F 1/26 (2006.01), G06F 1/32 (2006.01), H01L 23/50 (2006.01), H01L 23/485 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard, Santa Clara, California 95052 (US) (For All Designated States Except US).
BURTON, Edward [US/US]; (US) (For US Only)
Inventors: BURTON, Edward; (US)
Agent: RYDER IP LAW, PC; Intellevate, P.O. Box 52050, Minneapolis, MN 55402 (US)
Priority Data:
11/193,276 29.07.2005 US
Title (EN) IC WITH ON-DIE POWER-GATING CIRCUIT
(FR) CI AVEC CIRCUIT DE PORTILLONNAGE À L'INTÉRIEUR D'UNE PUCE
Abstract: front page image
(EN)A semiconductor device is described that includes, on a single die, both a functional circuit and a power-gating circuit. The power-gating circuit is used to control the power delivered to core circuit elements such as the functional circuit on the semiconductor device. The power is provided to and possibly from the power-gating circuit using underutilized die connection elements such as C4 bumps.
(FR)La présente invention concerne un dispositif à semi-conducteurs qui comprend, sur une seule puce, un circuit fonctionnel et un circuit de portillonnage. Le circuit de portillonnage sert à contrôler l'énergie délivrée aux éléments du circuit central, tel que le circuit fonctionnel sur le dispositif à semi-conducteurs. L'énergie est fournie au circuit de portillonnage et, si possible, à partir de celui-ci en utilisant des éléments de raccordement de puce sous-utilisés, comme des bosses C4.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)