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Machine translation
1. (WO2007018678) DAMAGE-FREE ASHING PROCESS AND SYSTEM FOR POST LOW-K ETCH
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/018678    International Application No.:    PCT/US2006/019914
Publication Date: 15.02.2007 International Filing Date: 24.05.2006
IPC:
H01L 21/302 (2006.01)
Applicants: TOKYO ELECTRON LIMITED [JP/JP]; 3-6 Akasaka 5-chome, Minato-ku, Tokyo, 107-8481 (JP) (For All Designated States Except US).
NISHINO, Masaru [JP/US]; (US) (For US Only).
TRICKETT, Douglas, M. [US/US]; (US) (For US Only)
Inventors: NISHINO, Masaru; (US).
TRICKETT, Douglas, M.; (US)
Agent: LAZAR, Dale, S.; DLA PIPER RUDNICK GRAY CARY US LLP, P.O. Box 9271, Reston, VA 20195 (US)
Priority Data:
11/195,854 03.08.2005 US
Title (EN) DAMAGE-FREE ASHING PROCESS AND SYSTEM FOR POST LOW-K ETCH
(FR) PROCEDE ET SYSTEME DE CALCINATION NON DOMMAGEABLE POSTERIEUR A LA MORSURE D'UNE COUCHE A FAIBLE K
Abstract: front page image
(EN)A process is provided for substrate ashing following the etching of features in a low dielectric constant (low-k) layer. The low-k layer can include ultra-low-k material, or a porous low-k material. The process may be configured to remove etch byproducts while preserving feature critical dimension. The ashing process comprises the use of a nitrogen and hydrogen containing chemistry with a passivation chemistry that includes oxygen, such as O2, CO, or CO2, or any combination thereof.
(FR)L'invention porte sur un procédé de calcination de substrats faisant suite à la morsure d'éléments d'une couche à faible constante diélectrique (faible k) pouvant consister en un matériau à k ultra faible ou en un matériau poreux à faible k. Le procédé de calcination n'élimine que les sous produits de morsure, tout en préservant les dimensions critiques des éléments. Le procédé de calcination utilise des produits chimiques riches en azote et en hydrogène associés à des produits passivants riches en oxygène tels que O2, CO, CO2, ou une de leur combinaison.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)