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1. (WO2007017950) DIELECTRIC CERAMIC COMPOSITION FOR ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2007/017950 International Application No.: PCT/JP2005/014770
Publication Date: 15.02.2007 International Filing Date: 11.08.2005
IPC:
C04B 35/00 (2006.01) ,H01B 3/12 (2006.01)
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
3
Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
02
mainly consisting of inorganic substances
12
ceramics
Applicants: SHIMADA, Takeshi[JP/JP]; JP (UsOnly)
HITACHI METALS, LTD.[JP/JP]; 2-1, Shibaura 1-chome Minato-ku, Tokyo 105-8614, JP (AllExceptUS)
Inventors: SHIMADA, Takeshi; JP
Agent: HAYASHI, Tomio; Shin-ei Patent Office 7-13, Nishi-Shimbashi 1-chome Minato-ku, Tokyo 1050003, JP
Priority Data:
Title (EN) DIELECTRIC CERAMIC COMPOSITION FOR ELECTRONIC DEVICE
(FR) COMPOSITION CÉRAMIQUE DIÉLECTRIQUE POUR DISPOSITIF ÉLECTRONIQUE
(JA) 電子デバイス用誘電体磁器組成物
Abstract:
(EN) A dielectric ceramic composition for electronic device that while maintaining high Qf value and dielectric constant, is capable of control of temperature coefficient (&tgr;f), especially control toward negative, and that is capable of attaining a shortening of sintering time. There is provided a specified formulation obtainable by replacing by Ni the Mg of the conventional composition of the formula XBa(Mg1/3Ta2/3)O3-Y(BazSr1-z)(Ga1/2Ta1/2)O3. By virtue of this formulation, while maintaining high Qf value and dielectric constant, the temperature coefficient (&tgr;f) can be shifted toward negative, and the &tgr;f value can be controlled within the range of 0.80 to -4.45 ppm/˚C. Further, even when the sintering time having been needed to be about 50 hours is reduced to half thereof, 25 hr, the equivalent Qf value can be obtained.
(FR) L’invention concerne une composition céramique diélectrique pour dispositif électronique qui tout en maintenant une valeur Qf élevée et une constante diélectrique, est capable de contrôler le coefficient de température (&tgr;f), en particulier vers la négative, et qui est capable de raccourcir le temps de frittage. Elle porte sur une formulation spécifiée que l’on peut obtenir en remplaçant par Ni le Mg de la composition conventionnelle de la formule XBa(Mg1/3Ta2/3)O3-Y(BazSr1-z)(Ga1/2Ta1/2)O3. Cette formulation, qui tout en maintenant une valeur Qf élevée et une constante diélectrique, le coefficient de température (&tgr;f) peut être décalé vers la négative, et l’on peut maintenir la valeur &tgr;f dans la fourchette de 0,80 à -4,45 ppm/°C. De plus, même si le temps de frittage devant être de l’ordre de 50 heures est réduit de moitié, on peut obtenir la valeur Qf équivalente.
(JA)  この発明は、高いQf値、誘電率を維持したままで、温度係数τfのコントロール、特に負の方向へのコントロールが可能で、かつ、焼結時間の短縮を図ることができる電子デバイス用誘電体磁器組成物の提供を目的としている。この発明は、組成式がXBa(Mg1/3Ta2/3)O3-Y(BazSr1-z)(Ga1/2Ta1/2)O3で表わされる従来の組成において、MgをNiで置換した特定組織になすことにより、高いQf値、誘電率を維持したままで、温度係数τfを負の方向へシフトさせ、τfを0.80~-4.45ppm/°Cの範囲でコントロールでき、さらに従来50時間程度必要であった焼結時間を、半分の25時間に短くしても、同等のQf値が得られる。    
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)