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1. (WO2007016477) NORMALLY OFF III-NITRIDE SEMICONDUCTOR DEVICE HAVING A PROGRAMMABLE GATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/016477    International Application No.:    PCT/US2006/029709
Publication Date: 08.02.2007 International Filing Date: 31.07.2006
IPC:
H01L 21/84 (2006.01)
Applicants: INTERNATIONAL RECTIFIER CORPORATION [US/US]; 233 Kansas Street, El Segundo, California 90245 (US) (For All Designated States Except US).
BRIERE, Michael, A. [US/US]; (US) (For US Only)
Inventors: BRIERE, Michael, A.; (US)
Agent: WEINER, Samuel, H.; Ostrolenk, Faber, Gerb & Soffen, LLP, 1180 Avenue Of the Americas, New York, New York 10036 (US)
Priority Data:
60/703,931 29.07.2005 US
11/460,725 28.07.2006 US
Title (EN) NORMALLY OFF III-NITRIDE SEMICONDUCTOR DEVICE HAVING A PROGRAMMABLE GATE
(FR) DISPOSITIF A SEMI-CONDUCTEUR DE NITRURE DU GROUPE III NORMALEMENT FERME POSSEDANT UNE GRILLE PROGRAMMABLE
Abstract: front page image
(EN)A III-nitride semiconductor device which includes a charged gate insulation body.
(FR)L'invention concerne un dispositif à semi-conducteur de nitrure du groupe III comprenant un corps d'isolation de grille chargé.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)