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Machine translation
1. (WO2007016045) DISTRIBUTED TRANSISTOR STRUCTURE FOR HIGH LINEARITY ACTIVE CATV POWER SPLITTER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/016045    International Application No.:    PCT/US2006/028716
Publication Date: 08.02.2007 International Filing Date: 24.07.2006
IPC:
H03F 1/32 (2006.01)
Applicants: ANALOG DEVICES, INC. [US/US]; One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 (US) (For All Designated States Except US).
ZHANG, Shuyun [US/US]; (US) (For US Only).
ZHAO, Yibing [CN/US]; (US) (For US Only)
Inventors: ZHANG, Shuyun; (US).
ZHAO, Yibing; (US)
Agent: CONNORS, Matthew, E.; Gauthier & Connors LLP, 225 Franklin Street, Suite 2300, Boston, MA 02110 (US)
Priority Data:
60/702,957 27.07.2005 US
Title (EN) DISTRIBUTED TRANSISTOR STRUCTURE FOR HIGH LINEARITY ACTIVE CATV POWER SPLITTER
(FR) STRUCTURE DE TRANSISTOR DISTRIBUEE POUR DIVISEUR DE PUISSANCE DE TELEDISTRIBUTION ACTIF A LINEARITE ELEVEE
Abstract: front page image
(EN)A transistor cell includes a first stage comprising a first transistor that is coupled to a RC filter arrangement. A second stage has a second transistor that is coupled to the first stage. The linearity of the transistor cell is improved by shifting the DC bias point so that the first stage is biased at a high quiescent current while the second stage is biased at a low quiescent current.
(FR)L'invention concerne une cellule de transistor qui comprend un premier étage comprenant une premier transistor couplé à un système de filtre RC. Un second étage comprend un second transistor couplé au premier étage. Pour améliorer la linéarité de la cellule de transistor, le point de polarisation en continu est modifié de façon que le premier étage soit polarisé à un courant de repos élevé tandis que le second étage est polarisé à un courant de repos bas.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)