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1. (WO2007015903) HIGH VOLTAGE NON PUNCH THROUGH IGBT FOR SWITCH MODE POWER SUPPLIES
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2007/015903 International Application No.: PCT/US2006/028005
Publication Date: 08.02.2007 International Filing Date: 19.07.2006
IPC:
H01L 21/332 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33
the devices comprising three or more electrodes
332
Thyristors
Applicants: FRANCIS, Richard[US/US]; US (UsOnly)
NG, Chiu[US/US]; US (UsOnly)
INTERNATIONAL RECTIFIER CORPORATION[US/US]; 233 Kansas Street El Segundo, CA 90245, US (AllExceptUS)
Inventors: FRANCIS, Richard; US
NG, Chiu; US
Agent: WEINER, Samuel, H. ; Ostrolenk, Faber, Gerb & Soffen LLP 1180 Avenue Of The Americas New York, NY 10036, US
Priority Data:
11/190,60227.07.2005US
Title (EN) HIGH VOLTAGE NON PUNCH THROUGH IGBT FOR SWITCH MODE POWER SUPPLIES
(FR) OPERATION DE NON POINCONNAGE HAUTE TENSION A TRAVERS UN TRANSISTOR BIPOLAIRE A GRILLE ISOLEE (IGBT) POUR DES ALIMENTATIONS ELECTRIQUES A MODE COMMUTE
Abstract:
(EN) A process for forming an NPT IGBT in a thin N type silicon wafer in which the bottom surface of a thin silicon wafer (100 microns thick or less) has a shallow reduced lifetime region in its bottom formed by a light species atom implant to a depth of less than about 2.5 microns. A P+ transparent collector region about 0.5 microns deep is formed in the bottom of the damaged region by a boron implant. A collector contact of A1/Ti/NiV and Ag is sputtered onto the collector region and is annealed at 200°C to 400°C for 30 to 60 minutes. A pre-anneal step before applying the collector metal can be carried out in vacuum at 300°C to 400°C for 30 to 60 seconds.
(FR) L'invention concerne un procédé de formation d'un NPT IGBT dans une fine plaquette en silicone d'un type N dans laquelle la surface inférieure d'une plaquette en silicone fine (100 microns ou moins) possède une zone de durée de vie réduite peu profonde dans son fond formée par implant d'atome d'espèce lumineuse à une profondeur inférieure à environ 2,5 microns. Une zone de collecteur transparente P+ d'environ 0,5 microns de profondeur est formée dans le fond de la zone endommagée par un implant de bord. Un contact de collecteur de A1/Ti/NiV et Ag est vaporisé sur le collecteur et recuit à des températures comprises entre 200 °C et 400 °C durant 30 à 60 minutes. Une étape de recuisson préalable avant application du métal collecteur peut être réalisée sous vide à des températures comprises entre 300 °C et 400 °C durant 30 à 60 secondes.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)