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Machine translation
1. (WO2007012465) AMPLIFIER ARRANGEMENT AND METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/012465    International Application No.:    PCT/EP2006/007340
Publication Date: 01.02.2007 International Filing Date: 25.07.2006
IPC:
H03F 3/72 (2006.01)
Applicants: AUSTRIAMICROSYSTEMS AG [AT/AT]; Schloss Premstätten, A-8141 Unterpremstätten (AT) (For All Designated States Except US).
AFONSO PEREZ, Mauro [ES/AT]; (AT) (For US Only)
Inventors: AFONSO PEREZ, Mauro; (AT)
Agent: EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Ridlerstr. 55, 80339 München (DE)
Priority Data:
05016241.1 26.07.2005 EP
Title (EN) AMPLIFIER ARRANGEMENT AND METHOD
(FR) AGENCEMENT D'AMPLIFICATEUR ET PROCEDE ASSOCIE
Abstract: front page image
(EN)The present invention relates to an amplifier arrangement having a transistor arrangement comprising a first transistor (1) in common-emitter configuration and a second transistor (2) in common-base configuration. A switching device (7) couples, in a first mode of operation, the first transistor (1) to an input (3) of the amplifier arrangement and while the second transistor (2) forms a cascode stage. In a second mode of operation the second transistor (2) is coupled to the input (3). While high gain is achieved during the first mode, the second mode allows for high linearity without requiring inductive degeneration.
(FR)La présente invention se rapporte à un agencement d'amplificateur comportant un agencement de transistors comprenant un premier transistor (1) dans une configuration à émetteur commun et un second transistor (2) dans une configuration à base commune. Un dispositif de commutation (7) relie, selon un premier mode de fonctionnement, le premier transistor (1) à une entrée (3) de l'agencement d'amplificateur, tandis que le second transistor (2) forme un étage cascode. Selon un second mode de fonctionnement, le second transistor (2) est relié à l'entrée (3). Alors qu'un fort gain est obtenu dans le premier mode, le second mode permet d'atteindre une linéarité élevée sans requérir une contre-réaction inductive.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)