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1. (WO2007011666) METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESSING
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/011666 International Application No.: PCT/US2006/027250
Publication Date: 25.01.2007 International Filing Date: 14.07.2006
IPC:
C23C 16/00 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, CA 95054, US (AllExceptUS)
THAKUR, Randhir [US/US]; US (UsOnly)
SPLINTER, Michael [US/US]; US (UsOnly)
Inventors:
THAKUR, Randhir; US
SPLINTER, Michael; US
Agent:
PATTERSON, Todd, B. ; Patterson & Sheridan, L.L.P. 3040 Post Oak Blvd., Suite 1500 Houston, Texas 77056-6582, US
Priority Data:
11/234,48722.09.2005US
60/700,52319.07.2005US
Title (EN) METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESSING
(FR) PROCEDE ET APPAREIL DE TRAITEMENT DE SEMI-CONDUCTEURS
Abstract:
(EN) A method and apparatus (300) for manufacturing semiconductors, comprising at least two transfer chambers (301 A, 301B) with exterior walls, at least one holding chamber attached to the transfer chamber, at least one load lock chamber (306A) attched to the walls of ther transfer chambers, and at least firve process chambers (314A-F) attached to the walls of the transfer chambers. A method and apparatus of depositing a high dielectric constant film, comprising depositing a base oxide on a substrate in a first process chamber, providing decoupled plasma nitration to a surface of the substrate in at least one second process chambe, and depositing polycrystaline silicon in at least one forth process chamber, wherein the first, second, third, and fouth process chambers are in fluid communication with a common interior chamber.
(FR) L'invention porte sur un procédé et un appareil de traitement de semi-conducteurs. L'appareil comporte: au moins deux chambres de transfert à parois extérieures; au moins une chambre de maintien fixée à une chambre de transfert; au moins une chambre de verrouillage de charge fixée aux parois des chambres de transfert; et au moins cinq chambres de traitement fixée aux parois des chambres de transfert. L'invention porte également sur un procédé et un appareil de dépôt d'un film à forte constante diélectrique consistant: à déposer dans une première chambre de traitement un oxyde de base sur un substrat; à effectuer dans au moins une deuxième chambre de traitement une nitruration découplée au plasma de la surface du substrat; à recuire dans une troisième chambre de traitement la surface du substrat, et à déposer dans au moins une quatrième chambre de traitement du silicium polycristallin sur le substrat, la première, la deuxième, la troisième et la quatrième chambre de traitement communiquant avec une chambre intérieure commune.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
NO20076576EP1911073JP2009503818CN101341276