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1. (WO2007011413) CARBON NANOTUBE ALIGNMENT METHOD, APPARATUS AND APPLICANTIONS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/011413 International Application No.: PCT/US2005/040793
Publication Date: 25.01.2007 International Filing Date: 14.11.2005
IPC:
H01L 21/00 (2006.01) ,D01F 9/12 (2006.01) ,C08K 3/04 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
D TEXTILES; PAPER
01
NATURAL OR ARTIFICIAL THREADS OR FIBRES; SPINNING
F
CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES, OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
9
Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
08
of inorganic material
12
Carbon filaments; Apparatus specially adapted for the manufacture thereof
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
K
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
3
Use of inorganic ingredients
02
Elements
04
Carbon
Applicants:
TUNG, Chao-Hung, Steve [US/US]; US
CLENDENIN, Jason, Michael [US/US]; US
ROKADIA, Husein, J. [IN/IN]; US
VENKATESH, Balaji, Srinivasan [IN/IN]; US
Inventors:
TUNG, Chao-Hung, Steve; US
CLENDENIN, Jason, Michael; US
ROKADIA, Husein, J.; US
VENKATESH, Balaji, Srinivasan; US
Agent:
DOUGHERTY, J., Charles; WRIGHT, LINDSEY & JENNINGS LLP 200 W. Capitol Ave., Suite 2300 Little Rock, AZ 72201-3699, US
Priority Data:
60/627,38512.11.2004US
Title (EN) CARBON NANOTUBE ALIGNMENT METHOD, APPARATUS AND APPLICANTIONS
(FR) PROCEDE D'ALIGNEMENT DE NANOTUBES DE CARBONE, APPAREIL ET APPLICATIONS
Abstract:
(EN) A horizontally aligned carbon nanotube (CNT) structure is disclosed. The structure may be used, for example, as a shear stress sensing element. The structure may be formed between surface micro-machined gold electrodes using AC dielectrophoresis. A 25 Vp_p electric field at 3 MHz may, for example, be used to form an approximately 150 pm wide line of aligned CNTs. A fabricated CNT shear stress sensor formed in this manner has been tested` by bonding a Plexiglas channel to the electrode chip in order to create a two-dimensional internal flow. The CNT shear stress sensor was found to have an average TCR of -0.0112 %/ °C or -0.06910/ °C and a current to voltage ratio of 0.07 mA/V.
(FR) L'invention porte sur une structure à nanotubes de carbones alignés horizontalement. La structure de l'invention peut être utilisée, par exemple, comme élément de détection de contrainte de cisaillement. La structure peut être formée entre des électrodes en or à surface micro-usinée par diélectrophorèse à C.A. On peut, par exemple, utiliser un champ électrique de 25 Vp_p à 3 MHz pour former une ligne d'environ 150 pm de large de nanotubes de carbone alignés. On a testé un capteur de contrainte de cisaillement à nanotubes de carbone fabriqué de cette manière en liant un canal de plexiglas à la puce à électrode afin de créer un courant interne bidimensionnel. Il a été découvert que le capteur de contrainte de cisaillement à nanotubes de carbone possède un coefficient de résistance thermique moyen de -0,0112 %/ °C ou de 0,.0691$g(V)/ °C et un rapport courant/tension de 0,07 mA/V.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)