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1. (WO2007011193) METHOD FOR MANUFACTURING COMPLIANT SUBSTRATE, COMPLIANT SUBSTRATE MANUFACTURED THEREBY, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR DEVICE HAVING THE COMPLIANT SUBSTRATE AND MANUFACTURING METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/011193    International Application No.:    PCT/KR2006/002892
Publication Date: 25.01.2007 International Filing Date: 21.07.2006
IPC:
H01L 21/20 (2006.01)
Applicants: THELEDS CO., LTD. [KR/KR]; 408, Saam-ri Wonsam-myeon Yongin-si, Gyeonggi-do 449-872 (KR) (For All Designated States Except US).
JIN, Yong Sung [KR/KR]; (KR) (For US Only).
LEE, Jae Hak [KR/KR]; (KR) (For US Only)
Inventors: JIN, Yong Sung; (KR).
LEE, Jae Hak; (KR)
Agent: WOO YUN IP & LAW FIRM; 3F, Maru Bldg., 942-20, Daichi-dong, Kangnam-ku, Seoul 135-845 (KR)
Priority Data:
10-2005-0066122 21.07.2005 KR
Title (EN) METHOD FOR MANUFACTURING COMPLIANT SUBSTRATE, COMPLIANT SUBSTRATE MANUFACTURED THEREBY, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR DEVICE HAVING THE COMPLIANT SUBSTRATE AND MANUFACTURING METHOD THEREOF
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT CONFORME, SUBSTRAT CONFORME FABRIQUÉ DE LA SORTE, DISPOSITIF SEMICONDUCTEUR COMPOSÉ À BASE DE NITRURE DE GALLIUM AYANT LE SUBSTRAT CONFORME ET PROCÉDÉ DE FABRICATION DE CELUI-CI
Abstract: front page image
(EN)A method of manufacturing a compliant substrate includes (a) heating a substrate and a group III metal including at least one of aluminum, gallium and indium that are placed in a reaction chamber; and (b) generating a chloride based compound by introducing HCl gas to the group III metal melted by the step (a), and reacting the chloride based compound with ammonia to grow a nitride based thin film. Accordingly, AlGaInN compliant substrate may be independently manufactured without the need for the process of manufacturing a buffer layer that is necessarily used during MOCVD to grow a high quality epitaxial layer on the sapphire wafer. Therefore, the total process time of MOCVD may be reduced.
(FR)L’invention concerne un procédé de fabrication d’un substrat conforme comprenant les étapes de : (a) chauffage d’un substrat et d’un métal de groupe III comprenant au moins un élément parmi aluminium, gallium et indium qui sont placés dans une chambre à réaction ; et (b) génération d’un composé à base de chlorure par l’introduction de gaz HCl dans le métal de groupe III fondu au cours de l’étape (a), et réaction du composé à base de chlorure avec de l’ammoniac de manière à former un film mince à base de nitrure. En conséquence, il est possible de fabriquer de manière indépendante le substrat conforme AlGaInN sans avoir besoin du procédé de fabrication d’une couche tampon qui est nécessairement utilisée durant la phase vapeur métalorganique (MOCVD) pour former une couche épitaxiale de haute qualité sur la plaquette de saphir. Le temps total de processus de MOCVD peut conséquemment être réduit.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: Korean (KO)