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1. (WO2007010966) METHOD FOR IMPROVING ADHESIVENESS OF ELECTROLESS COPPER PLATING FILM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/010966 International Application No.: PCT/JP2006/314349
Publication Date: 25.01.2007 International Filing Date: 20.07.2006
IPC:
C23C 18/16 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18
Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16
by reduction or substitution, i.e. electroless plating
Applicants:
アルプス電気株式会社 ALPS ELECTRIC CO., LTD. [JP/JP]; 〒1458501 東京都大田区雪谷大塚町1番7号 Tokyo 1-7, Yukigaya-Otsuka-cho, Ota-ku, Tokyo 1458501, JP (AllExceptUS)
三森 健一 MITSUMORI, Kenichi [JP/JP]; JP (UsOnly)
Inventors:
三森 健一 MITSUMORI, Kenichi; JP
Agent:
野▲崎▼ 照夫 NOZAKI, Teruo; 〒1020083 東京都千代田区麹町4丁目1番地4 西脇ビル3F Tokyo Oak Ikebukuro Building 3F 1-21-11, Higashi-Ikebukuro Toshima-ku, Tokyo 1700013, JP
Priority Data:
2005-21299622.07.2005JP
Title (EN) METHOD FOR IMPROVING ADHESIVENESS OF ELECTROLESS COPPER PLATING FILM
(FR) PROCÉDÉ D’AMÉLIORATION DE L'ADHÉRENCE D'UNE PELLICULE DE CUIVRAGE CHIMIQUE AUTOCATALYTIQUE
(JA) 無電解銅めっき膜の密着性改善方法
Abstract:
(EN) [PROBLEMS] To provide a method for improving adhesiveness between a glass substrate and an electroless copper plating film without sacrificing high frequency conductive property. [MEANS FOR SOLVING PROBLEMS] The glass substrate (1) having a smooth surface is dipped in an electroless copper plating bath, and the electroless copper plating film (4) is formed on one plane of the glass substrate (1). Then, a minus electrode (11) is pressed to the glass substrate (1), and a plus electrode (12) is pressed to the electroless copper plating film (4) to apply a voltage between electrodes (11, 12), and the electroless plating film (4) is heated.
(FR) La présente invention concerne un procédé d’amélioration de l’adhérence entre un substrat de verre et une pellicule de cuivrage chimique autocatalytique sans sacrifier les propriétés conductrices à haute fréquence. Le substrat de verre (1) présentant une surface lisse est trempé dans un bain de cuivrage chimique autocatalytique, et la pellicule de cuivrage chimique autocatalytique (4) est déposée sur un plan du substrat de verre (1). Ensuite, une électrode moins (11) est pressée contre le substrat de verre (1), et une électrode plus (12) est pressée contre la pellicule de cuivrage chimique autocatalytique (4) pour appliquer une tension entre les électrodes (11, 12), et la pellicule de cuivrage chimique autocatalytique (4) est chauffée.
(JA) 【課題】高周波導電性を犠牲にすることなくガラス基板と無電解銅めっき膜との密着性を高める方法を提供する。 【解決手段】平滑な表面を有するガラス基板1を無電解銅めっき浴中に浸漬してガラス基板1の片面に無電解銅めっき膜4を形成する。次いで、ガラス基板1側にマイナス電極11、無電解銅めっき膜4側にプラス電極12を押し付けて各電極11,12間に電圧を印加し、無電解銅めっき膜4を加熱する
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)