Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2007010746) SEMICONDUCTOR STORAGE COMPRISING VARIABLE RESISTOR ELEMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/010746 International Application No.: PCT/JP2006/313397
Publication Date: 25.01.2007 International Filing Date: 05.07.2006
IPC:
H01L 27/10 (2006.01) ,H01L 45/00 (2006.01) ,H01L 49/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49
Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 〒5458522 大阪府大阪市阿倍野区長池町22番22号 Osaka 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522, JP (AllExceptUS)
山崎 信夫 YAMAZAKI, Shinobu; null (UsOnly)
小田部 拓也 OTABE, Takuya; null (UsOnly)
Inventors:
山崎 信夫 YAMAZAKI, Shinobu; null
小田部 拓也 OTABE, Takuya; null
Agent:
政木 良文 MASAKI, Yoshifumi; 〒5410042 大阪府大阪市中央区今橋4丁目3番6号 淀屋橋NAOビル7F Osaka Yodoyabashi NAO Bldg. 7F 3-6, Imabashi 4-chome Chuo-ku, Osaka-shi Osaka 541-0042, JP
Priority Data:
2005-20969720.07.2005JP
Title (EN) SEMICONDUCTOR STORAGE COMPRISING VARIABLE RESISTOR ELEMENT
(FR) STOCKAGE À SEMI-CONDUCTEURS CONTENANT UN ÉLÉMENT À RÉSISTANCE VARIABLE
(JA) 可変抵抗素子を備えた半導体記憶装置
Abstract:
(EN) Disclosed is a semiconductor storage comprising a variable resistor element obtained by arranging a variable resistive body between a first electrode and a second electrode. The electrical resistance of the variable resistor element is varied by applying a voltage pulse between the electrodes. This semiconductor storage has a structure including at least one layer of a reaction blocking film which is composed of a material having a function to block transmission of a reduction species for accelerating reduction reaction of the variable resistive body and a oxidation species for accelerating oxidation reaction of the variable resistive body. By having such a structure, resistance fluctuation of the variable resistor element caused by a reduction or oxidation reaction due to hydrogen or oxygen present in the manufacturing process can be suppressed, thereby stably manufacturing a semiconductor storage having less resistance variation and good controllability with good reproducibility.
(FR) La présente invention concerne un stockage à semi-conducteurs comprenant un élément à résistance variable obtenu en agençant un corps résistif variable entre une première et une seconde électrode. La résistance électrique de l'élément à résistance variable varie avec l'application d'une impulsion de tension entre les électrodes. Le stockage à semi-conducteurs possède une structure qui comprend au moins une couche d'un film bloquant la réaction et composée d'un matériau dont la fonction est de bloquer la transmission d'une espèce de réduction pour accélérer la réaction de réduction du corps résistif variable et une espèce d'oxydation pour accélérer la réaction d'oxydation du corps résistif variable. En disposant de cette structure, la fluctuation de résistance de l'élément à résistance variable, causée par une réaction de réduction ou d'oxydation due à la présence d'hydrogène ou d'oxygène dans le procédé de fabrication, peut être supprimée, ce qui permet de fabriquer de manière stable un stockage à semi-conducteurs ayant moins de variation à la résistance et une bonne capacité de contrôle et de reproduction.
(JA)  第1電極と第2電極の間に可変抵抗体を設けてなり、両電極間に電圧パルスを印加することにより電気抵抗が変化する可変抵抗素子を備えた半導体記憶装置において、可変抵抗体の還元反応を促進する還元種、及び酸化反応を促進する酸化種の透過をブロックする作用を有する材料から構成される反応阻止膜を少なくとも1層有する構造とする。これにより、製造工程途中で存在する水素若しくは酸素の影響による可変抵抗体の還元反応若しくは酸化反応で、可変抵抗素子の抵抗値が変動するのを抑制でき、抵抗値のばらつきの少ない且つ制御性の良好な半導体記憶装置を再現性良く安定に製造可能となる。
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
US20090102598