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1. (WO2007010736) PROTECTION FILM MANUFACTURING METHOD AND INORGANIC FILM MANUFACTURING METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/010736 International Application No.: PCT/JP2006/313242
Publication Date: 25.01.2007 International Filing Date: 03.07.2006
Chapter 2 Demand Filed: 17.05.2007
IPC:
H01L 21/316 (2006.01) ,B32B 9/00 (2006.01) ,H01L 51/50 (2006.01) ,H05B 33/04 (2006.01) ,H05B 33/10 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
B PERFORMING OPERATIONS; TRANSPORTING
32
LAYERED PRODUCTS
B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9
Layered products essentially comprising a particular substance not covered by groups B32B11/-B32B29/137
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
02
Details
04
Sealing arrangements
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
10
Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Applicants:
パイオニア株式会社 PIONEER CORPORATION [JP/JP]; 〒1538654 東京都目黒区目黒一丁目4番1号 Tokyo 4-1, Meguro 1-chome, Meguro-ku, Tokyo 1538654, JP (AllExceptUS)
吉澤達矢 YOSHIZAWA, Tatsuya [JP/JP]; JP (UsOnly)
Inventors:
吉澤達矢 YOSHIZAWA, Tatsuya; JP
Agent:
石川泰男 ISHIKAWA, Yasuo; 〒1050014 東京都港区芝二丁目17番11号 パーク芝ビル2階 Tokyo Park Shiba Building 2F 17-11, Shiba 2-chome Minato-ku Tokyo1050014, JP
Priority Data:
2005-20834919.07.2005JP
Title (EN) PROTECTION FILM MANUFACTURING METHOD AND INORGANIC FILM MANUFACTURING METHOD
(FR) PROCEDE DE FABRICATION D'UN FILM DE PROTECTION ET PROCEDE DE FABRICATION D'UN FILM INORGANIQUE
(JA) 保護膜製造方法、無機膜製造方法
Abstract:
(EN) A method for manufacturing a protection film for further improving density of an inorganic film or a method for manufacturing the inorganic film is provided. In a method for manufacturing an organic EL element (100) as an element, a barrier film (12) as a protection film for protecting an organic TFT (50), and a sealing film (20), an incompletely oxidized inorganic film (120) is formed prior to oxidation, and the formed inorganic film (120) is oxidized to be at least a part of the protection film.
(FR) L'invention concerne un procédé de fabrication d'un film de protection destiné à augmenter la densité d'un film inorganique, ou un procédé de fabrication du film inorganique. Au cours d'un procédé de fabrication d'un élément EL organique (100) en tant qu’élément, d'un film barrière (12) en tant que film de protection pour un TFT organique (50), et d'un film de scellement (20), un film inorganique n'étant pas complètement oxydé (120) est formé avant oxydation, et ce film inorganique (120) est oxydé afin de former au moins une partie du film de protection.
(JA)  無機膜の緻密性をより十分とできる保護膜の保護膜製造方法または無機膜製造方法の提供する。  素子たる有機EL素子100、有機TFT50を保護する保護膜たるバリア膜12、封止膜20の製造方法は、完全に酸化していない酸化前無機膜120を形成し、形成した酸化前無機膜120を酸化させて保護膜の少なくとも一部とする。
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2007010736US20090252863JP4671201