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1. (WO2007010717) DOUBLE SIDE POLISHING METHOD FOR WAFER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/010717 International Application No.: PCT/JP2006/312856
Publication Date: 25.01.2007 International Filing Date: 28.06.2006
IPC:
B24B 37/00 (2012.01) ,B24B 37/08 (2012.01) ,B24B 57/00 (2006.01) ,H01L 21/304 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
04
designed for working plane surfaces
07
characterised by the movement of the work or lapping tool
08
for double side lapping
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
57
Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
信越半導体株式会社 SHIN-ETSU HANDOTAI CO., LTD. [JP/JP]; 〒1000005 東京都千代田区丸の内1丁目4番2号 Tokyo 6-2, Ohtemachi 2-chome, Chiyoda-ku Tokyo 1000004, JP (AllExceptUS)
上野 淳一 UENO, Junichi [JP/JP]; JP (UsOnly)
小林 修一 KOBAYASHI, Syuichi [JP/JP]; JP (UsOnly)
Inventors:
上野 淳一 UENO, Junichi; JP
小林 修一 KOBAYASHI, Syuichi; JP
Agent:
好宮 幹夫 YOSHIMIYA, Mikio; 〒1110041 東京都台東区元浅草2丁目6番4号上野三生ビル4F Tokyo Uenosansei Bldg. 4F 6-4, Motoasakusa 2-chome Taito-ku, Tokyo 111-0041, JP
Priority Data:
2005-20921619.07.2005JP
Title (EN) DOUBLE SIDE POLISHING METHOD FOR WAFER
(FR) PROCÉDÉ DE POLISSAGE DOUBLE FACE DESTINÉ À UNE PLAQUETTE
(JA) ウエーハの両面研磨方法
Abstract:
(EN) A double side polishing method for a wafer, for simultaneously polishing both sides of the wafer held by a carrier, with the wafer clamped between upper and lower surface plates to which polishing cloth is applied and with slurry supplied between the upper and lower surface plates from a plurality of slurry supply holes provided in the upper surface plate. When both sides of the wafer are polished, the amount of slurry supplied from slurry supply holes provided outside the center of rotation of the upper surface plate is set larger than the amount of slurry supplied from slurry supply holes provided inside the center. As a result, the amount of polishing of the outer circumferential portion of the wafer is regulated to suppress outer circumferential sagging of the wafer. Occurrence of outer circumferential sagging of a wafer when its both sides are polished is thus suppressed.
(FR) La présente invention concerne un procédé de polissage double face destiné à une plaquette, permettant de polir simultanément les deux faces d’une plaquette maintenue par un porteur, la plaquette étant enserrée entre une plaque de surface supérieure et une plaque de surface inférieure sur lesquelles est appliqué un tissu de polissage et une pâte étant appliquée entre une plaque de surface supérieure et une plaque de surface inférieure depuis une pluralité d’orifices d’alimentation en pâte disposés dans la plaque de surface supérieure. Lorsque les deux faces de la plaquette sont polies, la quantité de pâte provenant des orifices d’alimentation en pâte disposés à l’extérieur du centre de rotation de la plaque de surface supérieure est fixée de manière à être supérieure à la quantité de pâte appliquée depuis les orifices d’alimentation en pâte disposés au centre. Ainsi, la quantité de polissage de la partie circonférentielle externe de la plaquette est réglée de manière à supprimer l’affaissement circonférentiel externe de la plaquette. On supprime ainsi l’apparition d’un affaissement circonférentiel externe d’une plaquette lorsque ses deux faces sont polies.
(JA)  キャリアに保持されたウエーハを研磨布が貼付された上下の定盤で挟み込み、前記上定盤に設けた複数のスラリー供給孔から上下定盤間にスラリーを供給しつつ、ウエーハの両面を同時に研磨するウエーハの両面研磨方法であって、前記ウエーハの両面研磨時に、前記上定盤の回転の中心に対して外側に設けたスラリー供給孔から供給するスラリーの量を、これより内側に設けたスラリー供給孔から供給するスラリーの量よりも多くなるように供給することにより、前記研磨するウエーハの外周部の研磨量を調整して、該ウエーハの外周ダレを抑制するウエーハの両面研磨方法。これにより、ウエーハに両面研磨加工を施した際に、ウエーハに外周ダレが発生するのを抑制することのできる両面研磨方法が提供される。  
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020080033275EP1918069US20090124175CN101223006