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1. (WO2007010622) POLYCRYSTAL SILICON SUBSTRATE, FABRICATION METHOD THEREOF, PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION MODULE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/010622 International Application No.: PCT/JP2005/013506
Publication Date: 25.01.2007 International Filing Date: 22.07.2005
IPC:
C01B 33/02 (2006.01) ,H01L 31/04 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
02
Silicon
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
Applicants:
京セラ株式会社 KYOCERA CORPORATION [JP/JP]; 〒6128501 京都府京都市伏見区竹田鳥羽殿町6番地 Kyoto 6, Takeda Tobadono-cho, Fushimi-ku, Kyoto-shi, Kyo to 6128501, JP (AllExceptUS)
吉田 豊 YOSHIDA, Yutaka [JP/JP]; JP (UsOnly)
新楽 浩一郎 NIIRA, Koichiro [JP/JP]; JP (UsOnly)
福井 健次 FUKUI, Kenji [JP/JP]; JP (UsOnly)
白澤 勝彦 SHIRASAWA, Katsuhiko [JP/JP]; JP (UsOnly)
Inventors:
吉田 豊 YOSHIDA, Yutaka; JP
新楽 浩一郎 NIIRA, Koichiro; JP
福井 健次 FUKUI, Kenji; JP
白澤 勝彦 SHIRASAWA, Katsuhiko; JP
Agent:
稲岡 耕作 INAOKA, Kosaku; 〒5410054 大阪府大阪市中央区南本町2丁目6番12号 サンマリオンNBFタワー21階 あい特許事務所内 Osaka c/o AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS Sun Mullion NBF Tower, 21st Floor 6-12, Minamihommachi 2-chome Chuo-ku, Osaka-shi, Osaka 5410054, JP
Priority Data:
Title (EN) POLYCRYSTAL SILICON SUBSTRATE, FABRICATION METHOD THEREOF, PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION MODULE
(FR) SUBSTRAT DE SILICIUM POLYCRISTALLIN, SON PROCÉDÉ DE FABRICATION, ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE, ET MODULE DE CONVERSION PHOTOÉLECTRIQUE
(JA) 多結晶シリコン基板及びその製造方法、並びに光電変換素子及び光電変換モジュール
Abstract:
(EN) A polycrystal silicon substrate for a photoelectric conversion element is subjected to analysis at 1000 degrees C by the Messbauer method using 57 Fe. When four components obtained from the high speed side by subjecting the obtained spectrum to waveform separation are defined I, II, III, and IV, the polycrystal silicon substrate has a region in which the peak intensities (heights) of the components satisfy III > II and III > I. The photoelectric conversion element obtained by using this polycrystal silicon substrate can have a high element characteristic.
(FR) La présente invention concerne un substrat de silicium polycristallin pour un élément de conversion photoélectrique qui est soumis à une analyse à 1000 degrés C par le procédé de Messbauer au moyen de 57 Fe. Lorsque quatre composants obtenus depuis le côté à grande vitesse en soumettant le spectre obtenu à une séparation de formes d’ondes sont définis I, II, III et IV, le substrat de silicium polycristallin présente une zone dans laquelle les intensités de pic (hauteurs) des composants satisfont III > II et III > I. L’élément de conversion photoélectrique obtenu en utilisant ce substrat de silicium polycristallin peut présenter des caractéristiques d’éléments élevées.
(JA)  光電変換素子用の多結晶シリコン基板であって、57Feを用いたメスバウア法で、1000°Cで分析したときに得られるスペクトルを波形分離して高速度側から順に現れた4つの成分をI、II、III、IVとしたとき、前記成分のピーク強度(高さ)が、III > II、及び、III > Iを満たす領域を基板中に有する多結晶シリコン基板。この多結晶シリコン基板を用いて得られる光電変換素子は、高い素子特性を有することが可能となる。
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)