Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2007010621) METHOD OF PREPARING PHOTOMASK PATTERN DATA, PHOTOMASK PRODUCED BY USING THAT PHOTOMASK PATTERN DATA, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE USING THAT PHOTOMASK
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/010621 International Application No.: PCT/JP2005/013501
Publication Date: 25.01.2007 International Filing Date: 22.07.2005
IPC:
G03F 1/36 (2012.01) ,G03F 1/68 (2012.01) ,G03F 1/70 (2012.01) ,G03F 7/20 (2006.01) ,H01L 21/027 (2006.01) ,H01L 21/82 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
36
Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68
Preparation processes not covered by groups G03F1/20-G03F1/5096
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68
Preparation processes not covered by groups G03F1/20-G03F1/5096
70
Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
Applicants:
富士通株式会社 FUJITSU LIMITED [JP/JP]; 〒2118588 神奈川県川崎市中原区上小田中4丁目1番1号 Kanagawa 1-1, Kamikodanaka 4-chome, Nakahara-ku, Kawasaki- shi, Kanagawa 2118588, JP (AllExceptUS)
大澤 森美 OSAWA, Morimi [JP/JP]; JP (UsOnly)
南 孝宜 MINAMI, Takayoshi [JP/JP]; JP (UsOnly)
浅井 了 ASAI, Satoru [JP/JP]; JP (UsOnly)
Inventors:
大澤 森美 OSAWA, Morimi; JP
南 孝宜 MINAMI, Takayoshi; JP
浅井 了 ASAI, Satoru; JP
Agent:
横山 淳一 YOKOYAMA, Junichi; 〒2118588 神奈川県川崎市中原区上小田中4丁目1番1号 富士通株式会社内 Kanagawa c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku, Kawasaki-shi Kanagawa 2118588, JP
Priority Data:
Title (EN) METHOD OF PREPARING PHOTOMASK PATTERN DATA, PHOTOMASK PRODUCED BY USING THAT PHOTOMASK PATTERN DATA, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE USING THAT PHOTOMASK
(FR) PROCÉDÉ D’ÉLABORATION DE DONNÉES DE MOTIF DE PHOTOMASQUE, PHOTOMASQUE OBTENU EN UTILISANT DES DONNÉES DE MOTIF DE PHOTOMASQUE ET PROCÉDÉ DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEUR UTILISANT LEDIT PHOTOMASQUE
(JA) フォトマスクパターンデータの作成方法、そのフォトマスクパターンデータを用いて作成されたフォトマスク、及び、そのフォトマスクを用いた半導体装置の製造方法
Abstract:
(EN) [PROBLEMS] A method of producing a photomask that optimizes a non-resolved auxiliary structure (sub-resolution-assist-feature) on a photomask in order to provide an optimum pattern miniaturization of a semiconductor device and the focal depth of the formed image of a photomask-circuit-forming pattern, and a method of producing a semiconductor device using that photomask. [MEANS OF SOLVING THE PROBLEMS] The method of producing a photomask characterized by comprising the steps of specifying the occurrence interval of main patterns occurring frequently, preparing data representing a non-resolved auxiliary structure so as to increase the density of the non-resolved auxiliary structure disposed between main patterns having the occurrence interval when the focal depth with respect to the main patterns having the occurrence interval is less than a specified value, and forming the mask patterns using data representing the main patterns and data representing the non-resolved auxiliary structure.
(FR) L’invention porte sur un procédé de fabrication de photomasque qui optimise une structure auxiliaire non résolue (caractéristique auxiliaire de sous-résolution) sur un photomasque pour constituer une miniaturisation de motif optimal d’un dispositif semi-conducteur et la profondeur focale de l’image formée d’un motif de formation de circuit de photomasque, et un procédé de fabrication d’un dispositif semi-conducteur à l’aide de ce photomasque. L’invention concerne un procédé d’élaboration d’un photomasque caractérisé en ce qu’il comprend les phases de précision de l’intervalle d’occurrence de motifs principaux se produisant fréquemment, d’élaboration de données représentant une structure auxiliaire non résolue de façon à augmenter la densité de la structure auxiliaire non résolue disposée entre des motifs principaux ayant l’intervalle d’occurrence lorsque la profondeur focale par rapport aux motifs principaux comportant l’intervalle d’occurrence est inférieure à une valeur spécifiée, et de formation des motifs de masque en utilisant les données représentant les motifs principaux et les données représentant la structure auxiliaire non résolue.
(JA) (課題)本発明は、半導体装置のパターンの微細化に好適とするため、フォトマスクの回路形成用パターンの結像の焦点深度がとれるように、フォトマスク上の未解像補助構造体(サブ・レゾリューション・アシスト・フィーチャ)を最適化するフォトマスクの製造方法、及び、そのフォトマスクを用いた半導体装置の製造方法を提供することを課題とする。 (解決手段)上記の課題を解決するため、本発明は、頻繁に出現する主パターンの頻出間隔を特定し、上記の頻出間隔を有する上記の主パターンに対する前記焦点深度が所定の値未満であるときには、上記の頻出間隔を有する上記の主パターン間に配置される未解像補助構造体の密度を向上するように、上記の未解像補助構造体を表すデータを作成し、上記の主パターンを表すデータと上記の未解像補助構造体を表すデータとを用いて前記マスクパターンを形成する工程を含むことを特徴とするフォトマスクの製造方法を提供する。                          
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JP4394143CN101228478DE112005003638