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Machine translation
1. (WO2007010489) BOOSTING TECHNIQUE FOR A BI-DIRECTIONAL SWITCH IN A POWER CONVERTER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/010489    International Application No.:    PCT/IB2006/052470
Publication Date: 25.01.2007 International Filing Date: 19.07.2006
IPC:
H02M 3/335 (2006.01)
Applicants: NXP B.V. [NL/NL]; High Tech Campus 60, NL-5656 AG Eindhoven (NL) (For All Designated States Except US).
DIKKEN, Jan [NL/NL]; (GB) (For US Only).
DEGEN, Peter, T., J. [NL/NL]; (GB) (For US Only)
Inventors: DIKKEN, Jan; (GB).
DEGEN, Peter, T., J.; (GB)
Agent: WHITE, Andrew; NXP Semiconductors, Intellectual Property Department, Cross Oak Lane, Redhill, Surrey RH1 5HA (GB)
Priority Data:
05106656.1 20.07.2005 EP
Title (EN) BOOSTING TECHNIQUE FOR A BI-DIRECTIONAL SWITCH IN A POWER CONVERTER
(FR) TECHNIQUE D'AMPLIFICATION POUR COMMUTATEUR BIDIRECTIONNEL DANS UN CONVERTISSEUR DE PUISSANCE
Abstract: front page image
(EN)A bi-directional switch for a power converter comprises first and second transistors (SW1 , SW2) and a floating supply capacitor (C2) associated with the second transistor (SW2). The drive circuit and/or gate of the first transistor (SW1) is charged by the floating supply capacitor (C2) of the second transistor (SW2). The charging takes place at a predetermined moment in the switching cycle, and in particular at a moment in the switching cycle when the voltage across the bi-directional switch is substantially a minimum.
(FR)La présente invention concerne un commutateur bidirectionnel pour un convertisseur de puissance, lequel comprend un premier et un second transistor (SW1, SW2) et un condensateur à alimentation flottant (C2) associé au second transistor (SW2). Le circuit d'attaque et/ou la grille du premier transistor (SW1) est chargé par le condensateur à alimentation flottant (C2) du second transistor (SW2). La charge s'effectue à un moment prédéterminé dans le cycle de commutation, et en particulier, à un moment, dans le cycle de commutation, où la tension à travers le commutateur bidirectionnel est essentiellement faible.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)