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1. (WO2007010149) UNIFORM CHEMICAL ETCHING METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/010149 International Application No.: PCT/FR2006/050456
Publication Date: 25.01.2007 International Filing Date: 18.05.2006
IPC:
H01L 21/306 (2006.01) ,H01L 21/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Applicants:
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES [FR/FR]; Parc Technologique Des Fontaines Chemin Des Franques F-38190 Bernin, FR (AllExceptUS)
DELATTRE, Cécile [FR/FR]; FR (UsOnly)
Inventors:
DELATTRE, Cécile; FR
Agent:
JOLY, Jean-Jacques ; Cabinet Beau de Loménie 158 Rue De L'Université F-75340 Paris Cedex 07, FR
Priority Data:
05 0501519.05.2005FR
Title (EN) UNIFORM CHEMICAL ETCHING METHOD
(FR) PROCEDE DE GRAVURE CHIMIQUE UNIFORME
Abstract:
(EN) The invention concerns a method for wet process chemical etching of a plate (20) comprising at least one silicon-germanium (SiGe) surface layer (21) to be etched by dispensing an etching solution (11) deposited on the rotating plate. The invention is characterized in that it includes a first etching step whereby said etching solution (11) is dispensed from a fixed position located at a specific distance from the center of the plate, and a second etching step whereby the etching solution (11) is dispensed radially from the center of the plate and over a maximum distance less than the radius (R) of said plate.
(FR) L'invention concerne un procédé de gravure chimique par voie humide d'une plaque (20) comprenant au moins une couche superficielle en silicium-germanium (SiGe) (21) destinée à être gravée par dispense d'une solution de gravure (11) déposée sur la plaque en rotation, caractérisé en ce qu'il comprend une première étape de gravure dans laquelle ladite solution de gravure (11) est dispensée à partir d'une position fixe située à une distance déterminée du centre de la plaque, et une seconde étape de gravure dans laquelle la solution de gravure (11) est dispensée radialement à partir du centre de la plaque et sur une distance maximale inférieure au rayon (R) de ladite plaque.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)
Also published as:
EP1883954JP2008541468FR2886053