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Pub. No.:    WO/2007/009365    International Application No.:    PCT/CN2006/001702
Publication Date: 25.01.2007 International Filing Date: 17.07.2006
Chapter 2 Demand Filed:    21.05.2007    
C09G 1/02 (2006.01)
Applicants: ANJI MICROELECTRONICS (SHANGHAI) CO., LTD [CN/CN]; Suite 613-618, The Fifth BLDG No. 3000 Longdong Ave. Zhangjiang Hi-tech Park Pudong Shanghai 201203 (CN) (For All Designated States Except US).
YANG, Andy, Chunxiao [CN/CN]; (CN) (For US Only).
YU, Chris, Chang [US/CN]; (CN) (For US Only).
SHIAO, Danny, Zhenglong [US/CN]; (CN) (For US Only).
JING, Judy, Jianfen [CN/CN]; (CN) (For US Only)
Inventors: YANG, Andy, Chunxiao; (CN).
YU, Chris, Chang; (CN).
SHIAO, Danny, Zhenglong; (CN).
JING, Judy, Jianfen; (CN)
Agent: ZHENGHAN LAW FIRM; 18 F, South Tower of Shanghai Stock Exchange Building 528 Pu Dong (South) Road Shanghai 200120 (CN)
Priority Data:
200510027990.9 21.07.2005 CN
(ZH) 化学机械抛光液
Abstract: front page image
(EN)A chemical mechanical polishing liquid, comprising at least an abrasive particle, a chemical additive and a carrier material, wherein the chemical additive is polycarboxylic acid or the salt thereof. Said polishing liquid is used to considerably reduce the defective rate, to increase the flatness level of the metal surface, to reduce polishing rate of metal, to optimize the polishing rate of dielectric, and to extend the range of process parameter.
(FR)L'invention concerne un liquide de polissage chimique mécanique comprenant au moins une particule abrasive, un additif chimique ainsi qu'une matière porteuse, l'additif chimique étant de l'acide carboxylique ou le sel de celui-ci. Ledit liquide de polissage est utilisé afin de réduire considérablement le taux de défaut, pour augmenter le niveau de planéité de la surface métallique, pour réduire le taux de polissage du métal, pour optimiser le taux de polissage de diélectrique et afin d'accroître la gamme des paramètres de traitement.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)