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1. (WO2007009042) LASER LIFT-OFF LED WITH IMPROVED LIGHT EXTRACTION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/009042 International Application No.: PCT/US2006/027205
Publication Date: 18.01.2007 International Filing Date: 11.07.2006
IPC:
H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
GELCORE LLC [US/US]; 6180 Halle Drive Valley View, OH 44125-4635, US (AllExceptUS)
GAO, Xiang [CN/US]; US (AllExceptUS)
VENUGOPALAN, Hari, S. [IN/US]; US (AllExceptUS)
SACKRISON, Michael [US/US]; US (UsOnly)
ELIASHEVICH, Ivan [US/US]; US (AllExceptUS)
Inventors:
GAO, Xiang; US
VENUGOPALAN, Hari, S.; US
SACKRISON, Michael; US
ELIASHEVICH, Ivan; US
Agent:
MCCOLLISTER, Scott, A.; Fay, Sharpe, Fagan, Minnich & McKee, LLP 1100 Superior Avenue, 7th Floor Cleveland, OH 44114-2579, US
Priority Data:
60/698,03211.07.2005US
Title (EN) LASER LIFT-OFF LED WITH IMPROVED LIGHT EXTRACTION
(FR) DEL LASER DE DECOLLEMENT A EXTRACTION DE RAYONNEMENT AMELIOREE
Abstract:
(EN) A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
(FR) L'invention concerne un dispositif électroluminescent comprenant un empilement de couches semi-conductrices définissant une jonction pn électroluminescente et une couche diélectrique disposée sur l'empilement de couches semi-conductrices. La couche diélectrique possède un indice de réfraction sensiblement apparié à celui de l'empilement de couches semi-conductrices. La couche diélectrique comprend une surface principale distale de l'empilement de couches semi-conductrices. La surface principale distale comprend des motifs, des rugosités ou des textures conçus pour favoriser l'extraction de rayonnement généré dans l'empilement de couches semi-conductrices.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020090016438EP1905104JP2009500872US20100181584CN101438422