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Machine translation
1. (WO2007009035) LATERAL GROWTH METHOD FOR DEFECT REDUCTION OF SEMIPOLAR NITRIDE FILMS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/009035    International Application No.:    PCT/US2006/027189
Publication Date: 18.01.2007 International Filing Date: 13.07.2006
IPC:
H01L 21/20 (2006.01)
Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street, 12th Floor, Oakland, CA 94607 (US) (For All Designated States Except US).
JAPAN SCIENCE AND TECHNOLOGY AGENCY [JP/JP]; 4-1-8, Honcho, Kawaguchi City, Saitama Prefecture 332-0012 (JP) (For All Designated States Except US).
BAKER, Troy, J. [US/US]; (US) (For US Only).
HASKELL, Benjamin, A. [US/US]; (US) (For US Only).
SPECK, James, S. [US/US]; (US) (For US Only).
NAKAMURA, Shuji [US/US]; (US) (For US Only)
Inventors: BAKER, Troy, J.; (US).
HASKELL, Benjamin, A.; (US).
SPECK, James, S.; (US).
NAKAMURA, Shuji; (US)
Agent: GATES, George, H.; Gates & Cooper LLP, 6701 Center Drive West, Suite 1050, Los Angeles, CA 90045 (US)
Priority Data:
60/698,749 13.07.2005 US
Title (EN) LATERAL GROWTH METHOD FOR DEFECT REDUCTION OF SEMIPOLAR NITRIDE FILMS
(FR) PROCEDE DE CROISSANCE LATERALE DESTINE A REDUIRE LES DEFAUTS DE FILMS DE NITRURE SEMIPOLAIRE
Abstract: front page image
(EN)A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.
(FR)L'invention concerne un procédé de croissance latérale visant à réduire les défauts de films de nitrure semipolaire. Ledit procédé consiste à sélectionner un plan et une composition de nitrure semipolaire, à sélectionner un substrat adapté pour la croissance du plan et de la composition de nitrure semipolaire, et à appliquer un procédé de croissance sélectif permettant la nucléation du nitrure semipolaire sur certaines zones du substrat et non sur d'autres zones du substrat, ledit procédé de croissance sélectif comprenant la croissance latérale du matériau de nitrure avec une surcroissance épitaxiale latérale (LEO), une surcroissance épitaxiale latérale de la paroi latérale (SLEO), une épitaxie saillante, ou un nanomasquage.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)