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1. (WO2007009011) LIGHT EMITTING DIODE COMPRISING SEMICONDUCTOR NANOCRYSTAL COMPLEXES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/009011 International Application No.: PCT/US2006/027125
Publication Date: 18.01.2007 International Filing Date: 13.07.2006
IPC:
H01L 33/50 (2010.01) ,H01L 33/56 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
56
Materials, e.g. epoxy or silicone resin
Applicants:
EVIDENT TECHNOLOGIES, INC. [US/US]; 216 River Street, Suite 200 Troy, NY 12180, US (AllExceptUS)
CHEON, Kwang-Ohk [KR/US]; US (UsOnly)
Inventors:
CHEON, Kwang-Ohk; US
Agent:
MELORO, Thomas, J. ; KENYON & KENYON LLP 1500 K Street, N.W., Suite 700 Washington, DC 20005, US
Priority Data:
60/698,64213.07.2005US
Title (EN) LIGHT EMITTING DIODE COMPRISING SEMICONDUCTOR NANOCRYSTAL COMPLEXES
(FR) DIODE ELECTROLUMINESCENTE A COMPLEXES NANOCRISTALLINS SEMI-CONDUCTEURS
Abstract:
(EN) A light emitting diode (LED) formed by depositing an LED chip and coupling a stability layer to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a nanocrystal complex layer. The nanocrystal complex layer is deposited on top of the stability layer. A thickness of the stability layer is chosen to maximizes a power of a light output by the nanocrystal complex layer. The matrix material and the stability layer can be of the same type of material. Additional layers of matrix material can be deposited on top of the nanocrystal complex layer. These additional layers can comprise matrix material only or can comprise matrix material and semiconductor nanocrystals to form another nanocrystal complex layer.
(FR) Diode électroluminescente (DEL) formée par dépôt d'une puce DEL et montage d'une couche de stabilité sur cette puce DEL. Des nanocristaux semi-conducteurs sont placés dans un premier matériau matriciel où ils forment une couche de complexe nanocristallin. Cette couche de complexe nanocristallin est déposée sur la couche de stabilité. L'épaisseur de la couche de stabilité est choisie dans le but de maximiser la puissance de l'émission lumineuse produite par la couche de complexe nanocrisallin. Ces couches supplémentaires peuvent contenir le matériau matriciel seul ou le matériau matriciel plus des nanocristaux semi-conducteurs et former alors une autre couche de complexe nanocristallin.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1908126CA2615134